NEC NE38018-TI-68

GaAs HJ-FET
L TO S BAND LOW NOISE AMPLIFIER
(New Plastic Package)
FEATURES
NE38018
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VCE = 2 V, ID= 5 mA
• LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
25
4
Noise Figure, NF (dB)
• HIGH ASSOCIATED GAIN:
14.5 dB typical at 2 GHz
• LG = 0.6 µm, WG = 800 µm
• TAPE & REEL PACKAGING
DESCRIPTION
GA
15
3
10
5
2
0
1
NF
The NE38018 is a low cost gallium arsenide Hetero-Junction
FET housed in a miniature (SOT-343) plastic surface mount
package. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
Its low noise figure, high gain, small size and weight make it
an ideal low noise medium power amplifier transistor in the 13 GHz frequency range. The NE38018 is suitable for GPS,
PCS, WLAN, MMDS, and other commercial applications.
Associated Gain, GA (dB)
20
• LOW NOISE FIGURE:
0.55 dB typical at 2 GHz
0
0.5
1
2
3
4
5 6 7 8 910
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
18 Package
SOT-343 Style
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
PARAMETERS AND CONDITIONS
NE38018
18
UNITS
NF1
Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz
dB
GA1
Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz
dB
P1dB
Output Power at 1 dB Gain Compression Point, f = 2 GHz
VDS = 2 V, IDS = 15 mA
VDS = 3 V, IDS = 30 mA
G1dB
MAG
O/P IP3
IDSS
MIN
12.5
TYP
MAX
0.55
1.0
14.5
dBm
dBm
12
17 (V67)
18 (V68)
dB
dB
16.0
16.5
Output IP3 at f = 2 GHz, ∆f = 1 MHz, VDS = 3 V, IDS = 5 mA
dBm
dBm
22 (V67)
23 (V68)
Saturated Drain Current at VDS = 2 V, VGS = 0 V
Gain at P1dB, f = 2 GHz
VDS = 2 V, IDS = 10 mA
VDS = 3 V, IDS = 20 mA
VDS = 2 V, IDS = 5 mA, f = 2 GHz
16.5
mA
40
100
170
VP
Pinch Off Voltage at VDS = 2 V, ID = 100 µA
V
-0.1
-0.8
-1.5
gm
Transconductance at VDS = 2 V, ID = 5 mA
mS
50
80
Gate to Source Leakage Current at VGS = -3 V
µA
1
˚C/W
833
IGSO
RTH(CH-A)
Thermal Resistance (Channel to Ambient)
20
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
NE38018
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
VDS
Drain to Source Voltage
V
Gate Current
µA
100
Gate to Source Voltage
V
-3
IDSS
IG
VGSO
RATINGS
4
IDS
Drain Current
mA
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
mW
150
PT
Total Power Dissipation
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
RECOMMENDED OPERATING
CONDITIONS (TA = 25°C)
SYMBOLS
VDS
PARAMETERS
UNITS MIN TYP MAX
V
1
2
3
ID
Drain to Source Voltage
Drain Current
mA
2
5
30
Pin
Input Power
dBm
0
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
(GHz)
(dB)
(dB)
VDS = 2 V, IDS = 5 mA
0.9
0.41
21.1
1.0
0.42
20.3
1.5
0.48
16.9
1.9
0.54
15.0
2.0
0.55
14.7
2.5
0.62
13.4
VDS = 2 V, IDS = 10 mA
0.9
0.37
22.0
1.0
0.38
21.8
1.5
0.44
17.6
1.9
0.49
15.6
2.0
0.50
15.5
2.5
0.56
13.9
VDS = 3 V, IDS = 5 mA
0.9
0.41
21.8
1.0
0.42
20.8
1.5
0.48
16.9
1.9
0.54
14.8
2.0
0.55
14.4
2.5
0.62
13.3
ΓOPT
MAG
ANG
Rn/50
0.65
0.63
0.55
0.48
0.46
0.38
25.1
27.2
42.4
58.0
62.1
81.3
0.18
0.18
0.17
0.16
0.15
0.13
0.59
0.50
0.50
0.38
0.39
0.38
29.2
38.0
39.6
45.1
54.4
70.3
0.13
0.12
0.12
0.11
0.11
0.10
0.67
0.65
0.54
0.47
0.45
0.38
24.9
26.9
42.1
57.8
61.8
80.7
0.18
0.18
0.17
0.16
0.15
0.13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE & ASSOCIATED GAIN
vs. DRAIN CURRENT
18
Ga
Noise Figure, NF (dB)
1.6
16
1.4
14
1.2
12
1.0
10
0.8
8
0.6
6
0.4
4
NF
0.2
2
0
0
5
10
15
20
Drain Current, ID (mA)
25
30
Total Power Dissipation, PT (mW)
1.8
200
20
VDS = 2V
f = 2 GHz
Associated Gain, GA (dB)
2.0
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FREE AIR
150
100
50
RTH = 833˚C/W
0
20˚C
50
100 125˚C 150
Ambient Temperature, TA (˚C)
200
NE38018
TYPICAL PERFORMANCE CURVES (TA = 25°C)
100
300
80
240
60
180
40
120
20
60
Drain Current, IDS (mA)
Drain Current, IDS (mA)
0.06 V
100
0.12 V
80
0.18 V
60
0.24 V
0.30 V
40
0.36 V
20
0.42 V
0.00
1.0
2.0
3.0
4.0
-800
5.0
-600
-400
-200
Drain Voltage, VDS (V)
Gate to Source Voltage, VGS (mV)
OUTPUT POWER, GAIN AND POWER
ADDED EFFICIENCY vs. INPUT POWER
VDS = 3 V, IDS = 20 mA, f = 2 GHz
OUTPUT POWER AND
INTERMODULATION PRODUCTS
vs. INPUT POWER
VDS = 3 V, IDS = 20 mA, f = 2 GHz
18
35
10
30
8
25
6
20
4
15
2
10
0
Power Out
Efficiency
Gain
-2
-4
-15
-10
-5
0
Input Power, PIN (dBm)
0
-10
0
-20
-30
-20
-40
-40
-50
Output Power
IM3
IM5
5
0
-20
Output Power, POUT (dBm)
40
12
Power Added Efficiency, η (%)
14
45
5
0.00
20
50
POUT @ 1 dB = 17 dBm
Gain @ 1 dB = 16.5 dB
Efficiency @ 1 dB = 38%
PSAT @ 1 dB = 17.5 dBm
16
Output Power, POUT (dBm)
Gain, GA (dB)
IDSS = 97 mA
GM = 80 mS
0.00
2 V, 5 mA
0.00
0.00
-60
-60
-20
-15
-10
-5
Input Power, PIN (dBm)
0
5
Intermodulation Product, IM3, IM5 (dBm)
VGS = 0.00 V
120
Transconductance, gm (mS)
DRAIN CURRENT AND TRANSCONDUCTANCE
vs. GATE TO SOURCE VOLTAGE
DC PERFORMANCE
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
30°
j10
0
25
10
50
100
0
12 GHz
-j10
180°
12 GHz
S22
.10 GHz
S11
.10 GHz
S21
.10 GHz
-j100
0°
12 GHz
-150°
-j25
S12
.10 GHz
12 GHz
-30°
-120°
-60°
-90°
-j50
VDS = 2 V, IDS = 5 mA
FREQUENCY
S11
(GHz)
MAG
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.992
1.027
0.999
0.981
0.964
0.876
0.773
0.686
0.604
0.542
0.496
0.472
0.476
0.506
0.548
0.603
0.677
0.750
0.800
0.829
S21
ANG
-2.50
-10.20
-17.98
-24.47
-29.81
-56.41
-79.57
-100.40
-120.28
-140.30
-160.84
178.65
141.84
112.81
87.17
62.70
40.36
21.52
5.69
-9.17
MAG
6.847
6.717
6.698
6.640
6.518
5.830
5.119
4.506
4.005
3.590
3.239
2.941
2.464
2.109
1.833
1.600
1.382
1.184
1.011
0.873
S12
S22
K
ANG
MAG
ANG
MAG
ANG
175.44
171.01
165.35
160.28
154.91
131.52
111.75
94.58
78.97
64.57
50.93
38.00
13.65
-8.88
-30.86
-52.62
-74.07
-94.38
-113.63
-132.22
0.009
0.017
0.025
0.033
0.041
0.073
0.096
0.114
0.127
0.138
0.147
0.155
0.169
0.183
0.199
0.212
0.223
0.229
0.231
0.232
86.79
84.51
79.74
76.53
72.59
56.83
44.71
35.02
26.80
19.51
12.72
6.47
-5.34
-16.40
-28.79
-42.18
-56.42
-71.03
-85.60
-100.40
0.642
0.626
0.632
0.632
0.623
0.561
0.493
0.430
0.370
0.314
0.263
0.219
0.167
0.154
0.161
0.207
0.307
0.422
0.511
0.571
-7.96
-11.36
-13.98
-17.71
-21.83
-40.01
-54.94
-67.65
-79.24
-90.98
-103.80
-118.63
-156.15
164.89
124.93
82.05
53.73
35.57
19.76
2.76
MAG1
(dB)
0.05
-0.16
0.00
0.06
0.12
0.28
0.42
0.54
0.67
0.77
0.87
0.94
1.04
1.09
1.11
1.13
1.10
1.03
0.98
0.95
28.63
25.95
24.23
22.99
22.03
19.04
17.28
16.01
15.02
14.18
13.45
12.80
10.46
8.79
7.60
6.59
6.03
6.04
6.43
5.78
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
30°
j10
0
10
25
50
100
S22
.10 GHz
0
12 GHz
12 GHz
S21
.10 GHz
180°
S11
.10 GHz
12 GHz
S12
.10 GHz
0°
-j10
12 GHz
-150°
-j100
-j25
-30°
-120°
-60°
-90°
-j50
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
(GHz)
MAG
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.992
1.000
0.991
0.967
0.943
0.815
0.689
0.593
0.513
0.458
0.423
0.410
0.433
0.472
0.520
0.579
0.659
0.734
0.785
0.814
S21
ANG
-3.80
-12.31
-21.04
-28.50
-34.68
-63.96
-88.19
-109.25
-129.18
-149.33
-169.94
169.75
134.29
106.93
82.83
59.50
38.07
19.78
4.28
-10.33
MAG
9.822
9.639
9.541
9.383
9.134
7.764
6.502
5.522
4.772
4.188
3.722
3.343
2.765
2.350
2.035
1.769
1.529
1.317
1.139
1.000
S12
S22
K
ANG
MAG
ANG
MAG
ANG
174.93
169.20
162.65
156.82
150.85
125.49
105.45
88.71
73.87
60.34
47.65
35.63
12.86
-8.50
-29.55
-50.43
-70.98
-90.40
-109.06
-127.38
0.008
0.015
0.022
0.029
0.035
0.063
0.083
0.100
0.115
0.129
0.143
0.155
0.179
0.200
0.219
0.232
0.241
0.244
0.243
0.242
87.39
84.00
80.28
76.20
72.64
58.52
48.85
41.27
34.71
28.25
21.92
15.50
2.21
-11.13
-25.78
-41.12
-56.67
-72.00
-87.00
-102.03
0.487
0.477
0.477
0.475
0.464
0.397
0.334
0.280
0.231
0.187
0.147
0.116
0.102
0.128
0.167
0.239
0.342
0.445
0.520
0.567
-9.73
-13.87
-17.02
-21.39
-25.94
-45.59
-60.27
-72.14
-83.06
-95.23
-110.79
-132.15
170.07
127.00
91.67
59.52
38.95
24.63
10.69
-5.07
MAG1
(dB)
0.06
-0.14
0.05
0.12
0.19
0.40
0.58
0.71
0.82
0.90
0.96
1.00
1.05
1.07
1.08
1.09
1.07
1.03
0.99
0.98
30.8
28.1
26.4
25.1
24.1
20.9
19.0
17.4
16.2
15.1
14.2
13.0
10.6
9.1
8.0
7.0
6.4
6.3
6.7
6.2
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
j100
j25
60°
150°
30°
j10
0
25
10
100
50
S22
.10 GHz
0
12 GHz 12 GHz
S21
.10 GHz
180°
S11
.10 GHz
S12
.10 GHz
0°
12 GHz
-j10
12 GHz
-150°
-30°
-j100
-j25
-120°
-60°
-j50
-90°
VDS = 2 V, IDS = 20 mA
FREQUENCY
S11
(GHz)
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
S21
S12
MAG
ANG
MAG
ANG
MAG
0.992
1.000
0.982
0.952
0.918
0.758
0.620
0.523
0.448
0.400
0.375
0.370
0.405
0.449
0.501
0.564
0.647
0.724
0.776
0.805
-5.06
-14.26
-23.84
-32.12
-38.97
-70.06
-94.61
-115.52
-135.35
-155.49
-176.15
163.70
129.39
103.27
80.15
57.58
36.64
18.68
3.43
-11.10
12.743
12.486
12.265
11.944
11.531
9.340
7.527
6.235
5.294
4.587
4.045
3.611
2.967
2.513
2.170
1.882
1.625
1.402
1.220
1.081
174.22
167.43
160.10
153.54
147.07
120.51
100.66
84.55
70.45
57.62
45.60
34.20
12.46
-8.15
-28.58
-48.89
-68.85
-87.73
-105.84
-123.82
0.007
0.013
0.019
0.025
0.031
0.055
0.074
0.093
0.110
0.127
0.144
0.159
0.187
0.211
0.231
0.245
0.251
0.253
0.250
0.248
S22
ANG
MAG
ANG
88.57
84.68
80.49
77.09
73.91
62.14
54.30
47.65
41.25
34.62
27.79
20.78
6.21
-8.47
-24.24
-40.53
-56.68
-72.41
-87.59
-102.80
0.344
0.338
0.335
0.332
0.321
0.263
0.213
0.173
0.138
0.105
0.075
0.060
0.097
0.145
0.196
0.276
0.376
0.473
0.541
0.581
-11.92
-16.65
-19.97
-24.86
-29.61
-49.67
-63.22
-73.71
-83.99
-97.82
-121.02
-159.78
134.07
103.25
75.95
49.96
32.15
19.01
5.58
-9.91
K
MAG1
0.08
-0.11
0.10
0.19
0.27
0.53
0.71
0.83
0.91
0.96
1.00
1.02
1.04
1.05
1.05
1.06
1.05
1.02
1.00
0.99
32.62
29.75
28.00
26.70
25.68
22.29
20.04
18.27
16.81
15.57
14.50
12.66
10.77
9.40
8.29
7.33
6.73
6.49
6.65
6.39
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25 °C)
j50
90°
120°
j100
j25
60°
150°
30°
j10
0
25
10
100
50
S22
.10 GHz
0
S12
.10 GHz
S21
.10 GHz
180°
12 GHz
0°
12 GHz
12 GHz
S11
.10 GHz
-j10
12 GHz
-150°
-j100
-j25
-30°
-120°
-60°
-90°
-j50
VDS = 3 V, IDS = 20 mA
FREQUENCY
S11
(GHz)
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
S21
S12
MAG
ANG
MAG
ANG
0.991
1.000
0.982
0.953
0.920
0.761
0.623
0.525
0.450
0.401
0.374
0.369
0.402
0.446
0.498
0.561
0.645
0.723
0.776
0.806
-4.94
-14.12
-23.65
-31.83
-38.63
-69.55
-93.97
-114.82
-134.56
-154.62
-175.27
164.59
130.10
103.91
80.73
58.12
37.13
19.17
3.81
-10.76
12.631
12.376
12.164
11.856
11.451
9.300
7.511
6.229
5.295
4.593
4.052
3.620
2.979
2.527
2.185
1.899
1.643
1.419
1.234
1.091
174.25
167.54
160.26
153.75
147.30
120.79
100.94
84.81
70.69
57.84
45.81
34.39
12.59
-8.08
-28.56
-48.95
-69.05
-88.12
-106.45
-124.65
MAG
0.007
0.013
0.019
0.025
0.031
0.055
0.074
0.091
0.108
0.125
0.140
0.155
0.183
0.207
0.227
0.241
0.249
0.251
0.249
0.248
S22
ANG
87.26
83.63
80.29
77.02
73.59
61.65
53.68
47.11
40.91
34.43
27.75
20.95
6.58
-7.79
-23.38
-39.52
-55.59
-71.31
-86.55
`-101.85
MAG
ANG
0.378
0.371
0.369
0.365
0.354
0.291
0.239
0.196
0.160
0.125
0.091
0.067
0.082
0.126
0.174
0.253
0.355
0.455
0.526
0.569
-11.30
-15.83
-19.06
-23.73
-28.39
-47.62
-60.59
-70.43
-79.67
-91.32
-109.07
-139.28
146.70
109.81
79.83
52.19
33.99
20.78
7.29
-8.23
K
MAG1
0.07
-0.10
0.10
0.19
0.27
0.52
0.70
0.82
0.91
0.96
1.00
1.02
1.04
1.05
1.06
1.06
1.05
1.02
0.99
0.98
32.84
29.78
27.99
26.69
25.68
22.32
20.08
18.34
16.89
15.66
14.60
12.72
10.84
9.48
8.38
7.42
6.84
6.66
6.95
6.44
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE38018
NE38018 NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.003pF
GATE
Q1
LG_PKG
LG
0.55nH
0.7nH
LD
LD_PKG
0.87nH
0.1nH
DRAIN
CDS_PKG
0.15pF
CCG_PKG
0.12pF
CDX
0.04pF
LS
0.28nH
LS_PKG
0.05nH
CGX
0.12pF
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameters
Q1
Parameters
Q1
Parameter
VTO
-0.5935
RG
2.5
time
seconds
Units
VTOSC
0
RD
3
capacitance
farads
ALPHA
7
RS
1.5
inductance
henries
BETA
1.14
RGMET
0
resistance
ohms
GAMMA
0.044
KF
0
voltage
volts
GAMMADC
0.03
AF
1
current
amps
Q
3.5
TNOM
27
DELTA
0
XTI
3
VBI
0.8
EG
1.43
IS
1e-14
VTOTC
0
N
1.3
BETATCE
0
RIS
2.3
FFE
1
RID
2.3
TAU
1e-12
CDS
0.1e-12
RDB
5000
CBS
1e-11
CGSO
1.2e-12
CGDO
0.145e-12
DELTA 1
0.3
DELTA 2
0.2
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
MODEL RANGE
Frequency:
Bias:
Power:
Date:
0.5 to 12 GHz
VDS = 2 V to 3 V, ID = 10 mA to 40 mA
IDSS = 97 mA @ VGS = 0 V, VDS = 2 V
VDS = 2 V, ID = 20 mA, 2 GHz
4/98
NE38018
ORDERING INFORMATION
OUTLINE DIMENSIONS (Units in mm)
PART NUMBER
QTY
IDSS RANGE
(mA)
MARKING
Bulk up to 3 K
40-165
V67 or V68
PACKAGE OUTLINE 18
NE38018
2.1 ± 0.2
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
0.65
2
0.60
V 68
2.0 ± 0.2
1
NE38018-TI-67
3 K/Reel
40-90
V67
NE38018-TI-68
3 K/Reel
70-170
V68
3 0.65
1.3
0.65
4
Pin Connections
1. Source
2. Gate
3. Source
4. Drain
+0.10
0.4 -0.05
0.3
0.9 ± 0.1
0 to 0.1
+0.10
0.15 -0.05
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
10/11/2000