NSC MM74HC51N

MM54HC51/MM74HC51 Dual AND-OR-Invert Gate
MM54HC58/MM74HC58 Dual AND-OR Gate
General Description
Features
These gates utilize advanced silicon-gate CMOS technology
to achieve operating speeds similar to LS-TTL gates with
the low power consumption of standard CMOS integrated
circuits. All gates have buffered outputs, providing high
noise immunity and the ability to drive 10 LS-TTL loads. The
54HC/74HC logic family is functionally as well as pin-out
compatible with the standard 54LS/74LS logic family. All
inputs are protected from damage due to static discharge by
internal diode clamps to VCC and ground.
Y
Y
Y
Y
Y
Typical propagation delay: 10 ns
Wide power supply range: 2 – 6V
Low quiescent supply current: 20 mA maximum
(74 Series)
Low input current: 1 mA maximum
High output current: 4 mA minimum
Connection Diagrams
Dual-In-Line Package
TL/F/5302 – 1
Top View
Order Number MM54HC51 or MM74HC51
Dual-In-Line Package
TL/F/5302 – 2
Top View
Order Number MM54HC58 or MM74HC58
C1995 National Semiconductor Corporation
TL/F/5302
RRD-B30M105/Printed in U. S. A.
MM54HC51/MM74HC51 Dual AND-OR-Invert Gate
MM54HC58/MM74HC58 Dual AND-OR Gate
January 1988
Absolute Maximum Ratings (Notes 1 & 2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (VCC)
DC Input or Output Voltage
(VIN, VOUT)
b 0.5 to a 7.0V
Supply Voltage (VCC)
b 1.5 to VCC a 1.5V
DC Input Voltage (VIN)
b 0.5 to VCC a 0.5V
DC Output Voltage (VOUT)
g 20 mA
Clamp Diode Current (IIK, IOK)
g 25 mA
DC Output Current, per pin (IOUT)
g 50 mA
DC VCC or GND Current, per pin (ICC)
b 65§ C to a 150§ C
Storage Temperature Range (TSTG)
Power Dissipation (PD)
(Note 3)
600 mW
S.O. Package only
500 mW
Lead Temp. (TL) (Soldering 10 seconds)
260§ C
Operating Temp. Range (TA)
MM74HC
MM54HC
Min
2
Max
6
Units
V
0
VCC
V
b 40
b 55
a 85
a 125
§C
§C
1000
500
400
ns
ns
ns
Input Rise or Fall Times
(tr, tf)
VCC e 2.0V
VCC e 4.5V
VCC e 6.0V
DC Electrical Characteristics (Note 4)
Symbol
Parameter
Conditions
TA e 25§ C
VCC
74HC
TA eb40 to 85§ C
Typ
54HC
TA eb55 to 125§ C
Units
Guaranteed Limits
VIH
Minimum High Level
Input Voltage
2.0V
4.5V
6.0V
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
V
VIL
Maximum Low Level
Input Voltage**
2.0V
4.5V
6.0V
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
V
VOH
Minimum High Level
Output Voltage
VIN e VIH or VIL
lIOUTl s20 mA
2.0V
4.5V
6.0V
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
V
4.5V
6.0V
4.2
5.7
3.98
5.48
3.84
5.34
3.7
5.2
V
V
2.0V
4.5V
6.0V
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
V
VIN e VIH or VIL
lIOUTl s4.0 mA
lIOUTl s5.2 mA
4.5V
6.0V
0.2
0.2
0.26
0.26
0.33
0.33
0.4
0.4
V
V
VIN e VIH or VIL
lIOUTl s4.0 mA
lIOUTl s5.2 mA
VOL
Maximum Low Level
Output Voltage
VIN e VIH or VIL
lIOUTl s20 mA
IIN
Maximum Input
Current
VIN e VCC or GND
6.0V
g 0.1
g 1.0
g 1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN e VCC or GND
IOUT e 0 mA
6.0V
2.0
20
40
mA
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package: b 12 mW/§ C from 65§ C to 85§ C; ceramic ‘‘J’’ package: b 12 mW/§ C from 100§ C to 125§ C.
Note 4: For a power supply of 5V g 10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
with this supply. Worst case VIH and VIL occur at VCC e 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current (IIN, ICC, and
IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.
**VIL limits are currently tested at 20% of VCC. The above VIL specification (30% of VCC) will be implemented no later than Q1, CY’89.
2
AC Electrical Characteristics VCC e 5V, TA e 25§ C, CL e 15 pF, tr e tf e 6 ns
Symbol
Parameter
Conditions
tPHL, tPLH
Maximum Propagation
Delay
Typ
Guaranteed
Limit
Units
10
20
ns
AC Electrical Characteristics VCC e 2.0V to 6.0V, CL e 50 pF, tr e tf e 6 ns (unless otherwise specified)
Symbol
Parameter
Conditions
VCC
TA e 25§ C
Typ
74HC
TA eb40 to 85§ C
54HC
TA eb55 to 125§ C
Units
Guaranteed Limits
tPHL, tPLH
Maximum Propagation
Delay
2.0V
4.5V
6.0V
63
13
11
125
25
21
158
32
27
186
37
32
ns
ns
ns
tTLH, tTHL
Maximum Output Rise
and Fall Time
2.0V
4.5V
6.0V
30
8
7
75
15
13
95
19
16
110
22
19
ns
ns
ns
CPD
Power Dissipation
Capacitance (Note 5)
CIN
Maximum Input
Capacitance
(per AND-OR-Gate)
20
5
pF
10
10
10
pF
Note 5: CPD determines the no load dynamic power consumption, PD e CPD VCC2 f a ICC VCC, and the no load dynamic current consumption, IS e CPD VCC f a ICC.
3
MM54HC51/MM74HC51 Dual AND-OR-Invert Gate
MM54HC58/MM74HC58 Dual AND-OR Gate
Physical Dimensions inches (millimeters)
Order Numbers MM54HC51J, MM54HC58J, MM74HC51J, MM74HC58J
NS Package J14A
Order Numbers MM74HC51N, MM74HC58N
NS Package N14A
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