DSA 30 C 150 PB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.75 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 30 C 150 PB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Housing: TO-220 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings VF forward voltage I FAV average forward current VF0 threshold voltage min. slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current Unit max. 150 V VR = 150 V TVJ = 25 °C TVJ = 25 °C 0.5 mA VR = 150 V TVJ = 125 °C 2.5 mA TVJ = 25 °C 0.89 V 1.02 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A rectangular 0.75 V 0.89 V TC = 150°C 15 A TVJ = 175°C 0.55 V TVJ = 125 °C d = 0.5 for power loss calculation only rF typ. -55 8.8 mΩ 1.75 K/W 175 °C TC = 25 °C 85 W t = 10 ms (50 Hz), sine TVJ = 45°C 120 A CJ junction capacitance VR = 24 V; f = 1 MHz TVJ = 25 °C EAS non-repetitive avalanche energy I AS = TVJ = 25 °C 0.05 mJ I AR repetitive avalanche current VA = 1.5·VR typ.: f = 10 kHz 0.1 A IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved 1 A; L = 100 µH Data according to IEC 60747and per diode unless otherwise specified 82 pF 20080929a DSA 30 C 150 PB advanced Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 35 0.50 -55 Weight A K/W 150 °C 2 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.4 0.8 Nm 20 60 N I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard abcdef XXXXXX Part Name DSA 30 C 150 PB Similar Part DSA30C150HB IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved D S A 30 C 150 PB YYWW Marking on Product DSA30C150PB Package TO-247 Delivering Mode Tube = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) Base Qty Code Key 50 505443 Voltage class 150 Data according to IEC 60747and per diode unless otherwise specified 20080929a DSA 30 C 150 PB advanced Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 M C B E D F N A H G J K L IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Q R Data according to IEC 60747and per diode unless otherwise specified 20080929a