DSA 50 C 100 QB V RRM = 100 V I FAV = 2x 25 A V F = 0.72 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 50 C 100 QB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Housing: TO-3P Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current ●rIndustry standard outline ●r compatible with TO-247 ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings VF forward voltage min. 100 V VR = 100 V 0.45 mA VR = 100 V TVJ = 125 °C 5 mA TVJ = 25 °C 0.90 V 1.07 V 0.72 V 0.90 V TC = 155 °C 25 A TVJ = 175 °C 0.45 V IF = 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 125 °C I FAV average forward current threshold voltage rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t = 10 ms (50 Hz), sine CJ junction capacitance VR = 12 V; f = 1 MHz TVJ = 25 °C © 2010 IXYS all rights reserved Unit max. TVJ = 25 °C TVJ = 25 °C VF0 rectangular d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. 7.3 mΩ 0.95 K/W 175 °C TC = 25 °C 160 W TVJ = 45°C 230 A -55 Data according to IEC 60747and per diode unless otherwise specified 289 pF 20101129a DSA 50 C 100 QB Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 °C 5 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo D S A 50 C 100 QB IXYS Part No. Date Code Order Code abcd Ordering Standard Part Name DSA 50 C 100 QB Similar Part DSA50C100HB DSA60C100PB IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Marking on Product DSA50C100QB Package TO-247AD (3) TO-220AB (3) Delivering Mode Tube = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) Base Qty Code Key 30 504033 Voltage class 100 100 Data according to IEC 60747and per diode unless otherwise specified 20101129a DSA 50 C 100 QB Outlines TO-3P IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20101129a DSA 50 C 100 QB 70 10 60 1 150°C 50 IF 40 [A] 30 800 125°C IR CT 600 0.1 100°C [mA] 10 75°C [pF] 400 0.01 TVJ = 150°C 125°C 25°C 20 50°C TVJ = 25°C 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 200 0.0001 0 0 20 40 60 80 Fig. 1 Maximum forward voltage drop characteristics 0 20 70 70 60 40 60 80 100 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 80 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR DC 60 50 d = 0.5 50 P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 40 [A] 100 VR [V] VF [V] IF(AV) 1000 TVJ=175°C [W] 30 30 20 20 10 10 0 0 0 50 100 150 200 0 10 20 TC [°C] 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1.0 0.8 0.6 ZthJC Single Pulse 0.4 Rthi [K/W] 0.026 0.172 0.227 0.435 0.09 [K/W] 0.2 0.0 0.0001 0.001 0.01 0.1 1 ti [s] 0.0005 0.011 0.072 0.34 1.5 Note: All curves are per diode 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20101129a