Preliminary Technical Information TrenchHVTM Power MOSFET IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150 V = 56 A Ω ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 150 150 V V VGSM Transient ± 30 V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 56 140 A A IAR EAS TC = 25°C TC = 25°C 5 500 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω 3 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-263 S (TAB) TO-220 (IXTP) 300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C (TAB) D S G = Gate S = Source D = Drain TAB = Drain 1.13 / 10 Nm/lb.in. 3 2.5 Symbol Test Conditions (TJ = 25°C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 150 VGS(th) VDS = VGS, ID = 250 μA 2.5 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) G G TC = 25°C TL TSOLD TO-263 (IXTA) TJ = 150°C VGS = 10 V, ID = 28 A, Notes 1, 2 V 4.5 V ± 100 nA 5 200 μA μA 36 mΩ Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages Easy to mount z Space savings z High power density z DS99800 (03/07) © 2007 IXYS CORPORATION, All rights reserved IXTA56N15T IXTP56N15T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 28 A, Note 1 Typ. 23 39 S 2250 pF 330 pF 50 pF Ciss Coss TO-263 (IXTA) Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. td(on) Resistive Switching Times 16 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 28 A 17 ns td(off) RG = 5 Ω (External) 43 ns 18 ns tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 34 nC 10 nC 11 nC 0.50 °C/W RthJC RthCH Pins: TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Min. Characteristic Values Typ. Max. 56 A Pulse width limited by TJM 160 A VSD IF =25 A, VGS = 0 V, Note 1 1.1 V t rr IF = 25 A, -di/dt = 100 A/μs 100 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TO-220 (IXTP) Outline ns VR = 50 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 7,005,734 B2 7,157,338B2 7,063,975 B2 7,071,537 IXTA56N15T IXTP56N15T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 150 VGS = 10V 9V 8V 55 50 VGS = 10V 9V 135 120 105 40 ID - Amperes ID - Amperes 45 7V 35 30 25 20 75 60 7V 45 6V 15 8V 90 30 10 5 6V 15 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2.2 2 4 6 8 10 14 16 18 20 22 24 26 28 Fig. 4. RDS(on) Normalized to ID = 28A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 3.8 60 VGS = 10V 9V 8V 55 50 VGS = 10V 3.4 3 RDS(on) - Normalized 45 ID - Amperes 12 VDS - Volts V DS - Volts 40 7V 35 30 6V 25 20 15 I D = 56A 2.6 2.2 I D = 28A 1.8 1.4 1 10 0.6 5V 5 0 0.2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 28A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 60 3.8 55 VGS = 10V 3.4 TJ = 175ºC 50 3.0 45 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.6 2.2 1.8 40 35 30 25 20 1.4 15 TJ = 25ºC 10 1.0 5 0.6 0 0 10 20 30 40 50 60 70 80 90 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 100 110 120 130 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA56N15T IXTP56N15T Fig. 7. Input Admittance Fig. 8. Transconductance 70 55 TJ = - 40ºC 50 60 45 40 g f s - Siemens ID - Amperes 50 40 TJ = 150ºC 25ºC - 40ºC 30 20 25ºC 35 30 25 150ºC 20 15 10 10 5 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6 7 0 10 20 VGS - Volts 30 40 50 60 70 30 35 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 160 V DS = 75V 9 140 I D = 25A 8 I G = 10mA 120 100 VGS - Volts IS - Amperes 7 80 TJ = 150ºC 60 6 5 4 TJ = 25ºC 3 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 5 VSD - Volts 10 15 20 25 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 C iss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 100 0.10 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA56N15T IXTP56N15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 18 19 RG = 5Ω 17 VGS = 15V 17 TJ = 25ºC VDS = 75V t r - Nanoseconds t r - Nanoseconds 16 15 14 13 I D = 56A 12 I D = 28A 11 15 RG = 5Ω 13 V DS = 75V V GS = 15V 11 10 9 TJ = 125ºC 9 8 7 25 35 45 55 65 75 85 95 105 115 125 14 17 20 23 26 19 17 16 11 10 t f - Nanoseconds 17 13 12 15 14 5 6 7 8 9 19 48 I D = 28A 18 44 16 42 15 40 36 12 25 35 45 22 td(off) - - - - 75 85 95 105 115 34 125 45 52 40 18 46 TJ = 25ºC 44 16 42 15 40 VDS = 75V 35 t f - Nanoseconds 48 90 I D = 28A, 56A 30 80 25 70 20 60 15 50 10 40 t d ( o f f ) - Nanoseconds 19 100 TJ = 125ºC, V GS = 15V 50 t d ( o f f ) - Nanoseconds V DS = 75V 110 td(off) - - - - tf RG = 5Ω, V GS = 15V t f - Nanoseconds 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 54 TJ = 125ºC 55 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 21 56 38 I D = 56A RG - Ohms 14 46 17 10 11 12 13 14 15 16 17 18 19 20 tf 53 50 VDS = 75V 13 8 17 50 52 14 9 20 47 t d ( o f f ) - Nanoseconds 15 14 44 RG = 5Ω, VGS = 15V 20 t d ( o n ) - Nanoseconds t r - Nanoseconds 18 I D = 28A, 56A 41 54 21 V DS = 75V 38 td(off) - - - - tf TJ = 125ºC, VGS = 15V 16 35 22 td(on) - - - - tr 32 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 18 29 I D - Amperes T J - Degrees Centigrade 38 TJ = 125ºC 13 36 12 34 14 17 20 23 26 29 32 35 38 41 44 47 50 53 56 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 5 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 RG - Ohms IXYS REF: T_56N15T (4G) 12-07-06.xls