Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 (IXTH) S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 250 250 V V VGSM Transient ± 30 V ID25 IDM TC = 25°C* TC = 25°C, pulse width limited by TJM 76 170 A A IAS EAS TC = 25°C TC = 25°C 8 1.5 A J PD TC = 25°C 460 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C Mounting Torque TO-220,TO-3P,TO247 1.13 / 10 Mounting Force TO-262,TO-263 10..65 / 2.2..14.6 Nm/lb.in. N/lb. 1.6mm (0.062in.) from case for 10s Plastic body for 10seconds Weight (TAB) TO-262,TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g TO-3P (IXTQ) G Characteristic Values Min. Typ . Max. VGS = 0V, ID = 1mA VGS = 0V, ID = 10A 250 VGS(th) VDS = VGS, ID = 1mA 3 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 300 z International standard packages Avalanche rated z Low package inductance - easy to drive and to protect z Advantages z z z z V z ± 100 nA TJ = 125°C © 2007 IXYS CORPORATION, All rights reserved D = Drain TAB = Drain Easy to mount Space savings High power density Applications V 5 (TAB) S Features z Symbol Test Conditions (TJ = 25°C unless otherwise specified) D G = Gate S = Source z BVDSS DS Maximum Ratings TJ TJM Tstg Md FC G (TAB) S Symbol TL 250V 76A Ω 39mΩ RDS(on) ≤ N-Channel Enhancement Mode TO-263 (IXTA) = = 2 μA 200 μA z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applications 39 mΩ DS99663C(10/07) IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 • ID25, Note 1 43 Ciss Coss 72 S 4500 pF 480 pF 46 pF 22 ns 25 ns 56 ns 29 ns 92 nC 28 nC 21 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 25A Qgd 0.27 °C /W RthJC RthCH TO-220 0.50 °C W TO-3P, TO-247 0.21 °C W Source-Drain Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 76 A Repetitive, pulse width limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 38A, -di/dt = 250A/μs VR = 100V, VGS = 0V 148 ns 21 A 1.6 μC Notes: 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. *: Current may be limited by external lead limit. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins: 1 - Gate TO-247 (IXTH) Outline Dim. 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Leaded 262 (IXTI) Outline © 2007 IXYS CORPORATION, All rights reserved Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline 2 - Drain IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 80 VGS = 10V 8V 70 140 60 ID - Amperes 7V ID - Amperes VGS = 10V 8V 160 50 6V 40 30 120 7V 100 80 6V 60 20 40 10 20 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 Fig. 3. Output Characteristics @ 125ºC 10 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 38A Value vs. Junction Temperature 80 3.2 VGS = 10V 7V 70 3.0 VGS = 10V 2.8 2.6 RDS(on) - Normalized 60 ID - Amperes 8 VDS - Volts VDS - Volts 6V 50 40 30 20 2.4 2.2 2.0 1.8 I D = 76A 1.6 I D = 38A 1.4 1.2 1.0 5V 10 0.8 0.6 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 38A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Drain Current vs. Case Temperature 80 3.6 3.4 VGS = 10V 3.2 70 TJ = 125ºC 3.0 60 2.8 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.6 2.4 2.2 2.0 1.8 1.6 50 40 30 20 1.4 TJ = 25ºC 1.2 10 1.0 0 0.8 0 20 40 60 80 100 120 140 160 180 ID - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T Fig. 8. Transconductance Fig. 7. Input Admittance 120 140 110 120 90 g f s - Siemens 100 ID - Amperes TJ = - 40ºC 100 80 60 70 125ºC 60 50 40 TJ = 125ºC 25ºC - 40ºC 40 25ºC 80 30 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 VGS - Volts 200 10 180 9 160 8 140 7 120 TJ = 125ºC 80 TJ = 25ºC 60 120 140 160 180 80 90 100 VDS = 125V I D = 25A I G = 10mA 6 5 4 3 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 f = 1 MHz Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 100 Fig. 10. Gate Charge VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 80 ID - Amperes Coss 100 0.10 Crss 10 0 5 10 15 20 25 VDS - Volts © 2007 IXYS CORPORATION, All rights reserved 30 35 40 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 34 32 RG = 3.3Ω 30 VGS = 15V 32 28 VDS = 125V 28 26 24 I D = 76A 22 I D = 38A 20 TJ = 25ºC 30 t r - Nanoseconds t r - Nanoseconds 34 18 26 24 22 RG = 3.3Ω 20 VGS = 15V 18 VDS = 125V 16 16 14 14 12 12 10 TJ = 125ºC 8 10 25 35 45 55 65 75 85 95 105 115 15 125 20 25 30 35 T J - Degrees Centigrade ID = 38A Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 25 I D = 76A 14 t f - Nanoseconds t r - Nanoseconds 16 I D = 38A 59 24 56 22 20 20 8 9 10 11 12 13 14 RG = 3.3Ω, VGS = 15V 16 15 25 35 45 70 67 t f - Nanoseconds 18 52 49 TJ = 125ºC 14 46 12 43 45 50 44 125 55 60 65 70 75 80 ID - Amperes 170 TJ = 125ºC, VGS = 15V VDS = 125V 60 150 50 I D 130 = 38A, 76A 40 110 30 90 20 70 10 - Nanoseconds 55 VDS = 125V 40 115 d( of f ) 58 RG = 3.3Ω, VGS = 15V - Nanoseconds td(off) - - - - tf 35 105 t 61 70 d(of f ) 24 30 95 190 t 64 TJ = 125ºC 25 85 td(off) - - - - tf t f - Nanoseconds 28 20 75 80 TJ = 25ºC 15 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 30 16 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 20 47 VDS = 125V RG - Ohms TJ = 25ºC 50 td(off) - - - - tf 18 10 53 I D = 76A 12 22 62 26 21 7 80 - Nanoseconds 22 26 75 d(of f ) 18 - Nanoseconds 20 6 70 t 23 22 d(on) I D = 38A 5 65 t 24 4 60 24 VDS = 125V 3 55 65 28 TJ = 125ºC, VGS = 15V 26 50 30 td(on) - - - - tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 30 28 40 ID - Amperes 50 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_76N25T(6E)06-28-06