KSMF47P06 60V P-Channel MOSFET TO-220F Features • • • • • • • -30A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating General Description These P-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S ! ● ● G! ▶ ▲ ● ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current KSMF47P06 -60 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Units V -30 A -21.2 A -120 A ± 25 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 820 IAR Avalanche Current (Note 1) -30 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 6.2 -7.0 62 0.41 -55 to +175 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 2014-6-30 1 Typ -- Max 2.42 Units °C/W -- 62.5 °C/W www.kersemi.com KSMF47P06 Elerical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -60 -- -- V -- -0.06 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 150°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.021 0.026 Ω -- 19 -- S -- 2800 3600 pF -- 1300 1700 pF -- 320 420 pF ns Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -15 A gFS Forward Transconductance VDS = -30 V, ID = -15 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -23.5 A, RG = 25 Ω (Note 4, 5) VDS = -48 V, ID = -47 A, VGS = -10 V (Note 4, 5) -- 50 110 -- 450 910 ns -- 100 210 ns -- 195 400 ns -- 84 110 nC -- 18 -- nC -- 44 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -30 ISM -- -- -120 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -30 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -47 A, dIF / dt = 100 A/µs (Note 4) -- 130 -- ns -- 0.55 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.06mH, IAS = -30A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-6-30 2 www.kersemi.com KSMF47P06 Typical Characteristics 2 2 10 VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 10 1 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 1 -I D , Drain Current [A] -I D, Drain Current [A] Top : 10 175℃ 25℃ 0 10 -55℃ ※ Notes : 1. VDS = -30V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 Figure 1. On-Region Characteristics 10 2 10 0.08 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 8 Figure 2. Transfer Characteristics 0.10 VGS = - 10V 0.06 VGS = - 20V 0.04 0.02 ※ Note : TJ = 25℃ 1 10 0 10 175℃ 0 100 ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 200 300 10 400 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 7000 10 -V GS , Gate-Source Voltage [V] 6000 Coss 5000 Ciss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 4000 3000 Crss 2000 1000 0 -1 10 VDS = -30V 8 VDS = -48V 6 4 2 ※ Note : ID = -47 A 0 0 10 1 0 10 10 20 30 40 50 60 70 80 90 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 2014-6-30 25℃ -1 0.00 Capacitance [pF] 6 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMF47P06 Typical Characteristics 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage (Continued) 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -23.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 30 Operation in This Area is Limited by R DS(on) 25 2 10 100 µs -I D, Drain Current [A] -I D, Drain Current [A] 1 ms 10 ms 100 ms 1 10 DC 0 10 ※ Notes : o 1. TC = 25 C 20 15 10 5 o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 .2 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 4 2 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 10 100 D = 0 .5 0 0 .0 5 -1 0 .0 2 PDM 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] θ t1 Z t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-6-30 4 www.kersemi.com KSMF47P06 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on td(on) VDD VGS VGS RG t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V VDS (t) ID (t) IAS BVDSS tp 2014-6-30 VDD Time 5 www.kersemi.com KSMF47P06 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt 2014-6-30 6 www.kersemi.com KSMF47P06 Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 2014-6-30 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 7 www.kersemi.com