LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplictions LRB521S-30T1G Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. (SC-79/SOD523) Extremely Fast Switching Speed Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA 2 Low Reverse Current SOD523/SC-79 z Construction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. 1 Cathode 2 Anode DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LRB521S-30T1G 5M 3000/Tape&Reel LRB521S-30T3G 5M 10000/Tape&Reel MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -40~+125 Unit V mA A °C °C *60Hz for 1cycle. ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ - Max. 0.50 30 Unit V µΑ Conditions IF=200mA VR=10V Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LRB521S-30T1G Electrical characteristic curves(Ta=25oC) 100 0.01 0.001 0 100 200 300 400 500 600 1 0 1 0 . 1 0 . 0 1 0 . 0 0 1 0 . 0 0 0 1 0 . 0 0 0 0 1 0 5 FORWARD VOLTAGE:VF(mV) -25℃ 25℃ 75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 f=1MHz REVERSE CURRENT : I R (mA) FORWARD CURRENT : I F (A) 1 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 10 REVERSE VOLTAGE:V R(V) 125℃ 100℃ -25℃ 75℃ 25℃ 100℃ 125℃ 1 0 Ta=25oC f=1MHz 50 10 5 80 60 40 20 2 20 Ta=25℃ f=1MHz VR=0V n=10pcs 18 17 16 15 14 13 AVE:14.33pF 12 11 4 6 8 10 12 14 25 50 75 100 10 125 AMBIENT TEMPERATURE : Ta(oC) REVERSE VOLTAGE : VR(V) Ct DISPERSION MAP Fig. 4 Derating curve (mounting on glass epoxy PCBs) 20 Ifsm 15 8.3ms 10 5 AVE:5.60A PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1cyc 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 2 0 0 Fig. 3 Capacitance between terminals characteristics Ifsm 8.3ms 8.3ms 1cyc 5 0 0 Ifsm t 5 0 1 10 100 1 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.2 0.5 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=20mA FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.4 0.15 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 20 1 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 20 100 Io CURRENT (%) CAPACITANCE BETWEEN TERMINALS : CT(pF) 100 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Fig. 2 Reverse characteristics Fig. 1 Forward characteristics D=1/2 DC Sin(θ＝180) 0.1 0.05 time 0.3 DC 0.2 D=1/2 Sin(θ＝180) 0.1 300us 10 0.001 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 1000 0 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.5 0 10 20 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 30 Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LRB521S-30T1G SC-79/SOD-523 NOTES: −X− 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. D −Y− E 2X b 0.08 1 DIM A b c D E HE L L2 2 X Y M BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. TOP VIEW MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 A c HE SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.48 PACKAGE OUTLINE 1.80 2X 0.40 DIMENSION: MILLIMETERS Rev.O 3/3