MPS2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 2 BASE ƔFEATURES . Epitaxial Planar Die Construction . Complementary PNP Type Available 1 1 EMITTER 2 3 (MPS2907A) . Ideal for Medium Power Amplification and Switching ƔMAXIMUM RATINGS RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 к Derate Above 25 к Total Device Dissipation @ TC = 25 к Derate Above 25 к Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC TJ, TSTG VALUE 40 75 6.0 600 625 5.0 1.5 12 -55 ~ +150 UNIT V V V mA mW mW / к Watts mW / к к SYMBOL RșJA RșJC MAX. 200 83.3 UNIT к/W к/W PD PD ƔTHERMAL CHARACTERISTICS CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ƔELECTRICAL CHARACTERISTICS (T CHARACTERISTIC A = 25 к unless otherwise noted) SYMBOL Min. Max. UNIT V(BR)CEO 40 - V V(BR)CBO 75 - V V(BR)EBO 6.0 - V ICEX - 10 nA ICBO - 0.01 10 µA IEBO - 10 nA ICEO - 10 nA IBEX - 20 nA OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector - Base Breakdown Voltage (IC = 10 µA, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 µA, IC = 0) Collector Cutoff Current (VCE = 60 V, VEB(oFF) = 3.0 V) Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 60 V, IE = 0, TA = 150 к) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 V, VEB(oFF) = 3.0 V) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page1 of 6 MPS2222A NPN Silicon Elektronische Bauelemente ƔELECTRICAL CHARACTERISTICS (T General Purpose Transistor A = 25 к unless otherwise noted) (Continued) CHARACTERISTIC SYMBOL Min. Max. UNIT 35 50 75 35 100 50 40 300 - VCE(sat) - 0.3 1.0 V VBE(sat) 0.6 - 1.2 2.0 V fT 300 - MHz Cobo - 8.0 pF Cibo - 25 pF hie 2.0 0.25 8.0 1.25 Kȍ hre - 8.0 4.0 X 10-4 hfe 50 75 300 375 - hoe 5.0 25 35 200 µmhos rb, CC - 150 ps NF - 4.0 dB td tr ts tf - 10 25 225 60 ns ns ns ns ON CHARACTERISTICS DC Current Gain (IC = 0.1 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V, TA = -55 к) (IC = 150 mA, VCE = 10 V)(1) (IC = 150 mA, VCE = 1.0 V) (1) (IC = 500 mA, VCE = 10 V) (1) Collector - Emitter Saturation Voltage(1) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) Base - Emitter Saturation Voltage(1) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) hFE - SMALL - SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product(2) (IC = 20 mA, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) Voltage Feedback Ratio (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz)) Small - Signal Current Gain (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) Output Admittance (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) Collector Base Time Constant (IE = 20 mA, VCB = 20 V, f = 31.8 KHz) Noise Figure (IC = 100 µA, VCE = 10 V, RS = 1.0 Kȍ, f = 1.0 KHz) SWITCHING CHARACTERISTICS Delay Time (VCC = 30 V, VBE(off) = -2.0 V, Rise Time IC = 150 mA, IB1 = 15 mA) (Figure 1) Storage Time (VCC = 30 V, IC = 150 mA, Fall Time IB1 = IB2 = 15 mA) (Figure 2) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. 2. fT is defined as the frequency at which | hfe | extrapolates to unity. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page2 of 6 MPS2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS +ā30 V +ā30 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% +16 V 200 +16 V 0 0 -ā2 V 1 kΩ < 2 ns 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% CS* < 10 pF -14 V 1k < 20 ns -ā4 V Figure 2. Turn–Off Time 1000 700 500 hFE , DC CURRENT GAIN CS* < 10 pF 1N914 Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time 200 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page3 of 6 MPS2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time 8.0 6.0 f = 1.0 kHz 8.0 4.0 2.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 30 CAPACITANCE (pF) 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 300 Figure 6. Turn–Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25°C 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current–Gain Bandwidth Product Any changing of specification will not be informed individual Page4 of 6 MPS2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RqVC for VCE(sat) -ā0.5 -ā1.0 -ā1.5 RqVB for VBE -ā2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltages http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 500 1.0 k -ā2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page5 of 6 MPS2222A Elektronische Bauelemente NPN Silicon General Purpose Transistor ƔTO-92 PACKAGE OUTLINE DIMENSIONS Symbol A A1 b c D D1 E e e1 L Ö http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 Any changing of specification will not be informed individual Page6 of 6