MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323(SC-70) · · Epitaxial Planar Die Construction · Ideal for Medium Power Amplification and Switching A Complementary PNP Type Available (MMBT3906W) L 3 B S Top View 1 2 COLLECTOR 3 V 3 1 G C 1 BASE 2 SC-70 SOT-323 2 H D J K EMITTER MAXIMUM RATINGS Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 200 mW 1.6 mW/°C Thermal Resistance Junction to Ambient RqJA 625 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3904W = 1A, K2N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 — Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL — 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX — 50 nAdc OFF CHARACTERISTICS 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B v REM : Thermal Clad is a registered trademark of the Berquist Company. v Any changing of specification will not be informed individual Page 1 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 40 70 100 60 30 — — 300 — — — — 0.2 0.3 0.65 — 0.85 0.95 fT 300 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10– 4 Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 — Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mmhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF — 5.0 dB ((VCC = 3.0 Vdc,, VBE = – 0.5 Vdc,, IC = 10 mAdc, IB1 = 1.0 mAdc) td — 35 tr — 35 ((VCC = 3.0 Vdc,, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts — 200 tf — 50 ON CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) HFE Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B v 300 ms, Duty Cycle v 2.0%. ns ns Any changing of specification will not be informed individual Page 2 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor +3 V Duty Cycle = 2% 300 ns +10.9 V 275 Duty Cycle = 2% 10 k – 0.5 V t1 10 < t1 < 500 ms +3 V +10.9 V 10 k 0 CS < 4 pF* < 1 ns 275 CS < 4 pF* 1N916 – 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 5000 10 Cibo 3.0 Cobo 2.0 0.2 0.3 http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B Q, Charge (pC) Capacitance (pF) 2000 5.0 1.0 0.1 VCC = 40 V IC/IB = 10 3000 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1000 700 500 QT 300 200 100 70 50 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 Reverse Bias Voltage (V) I C, Collector Current (mA) Figure 3. Capacitance Figure 4. Charge Data 50 70 100 200 Any changing of specification will not be informed individual Page 3 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente 500 t r , Rise Time (ns) tr @ VCC = 3.0 V 50 30 20 40 V 15 V 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 50 30 20 7 5 200 20 30 Figure 5. Turn – On Time Figure 6. Rise Time IC/IB = 20 50 IC/IB = 10 30 20 7 5 50 70 100 200 IC/IB = 10 30 20 10 30 IC/IB = 20 100 70 50 7 5 20 200 VCC = 40 V IB1 = IB2 300 200 10 5.0 7.0 10 50 70 100 500 t′s = ts – 1/8 tf IB1 = IB2 IC/IB = 10 2.0 3.0 5.0 7.0 10 2.0 3.0 I C, Collector Current (mA) 100 70 1.0 1.0 I C, Collector Current (mA) 500 300 200 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , Fall Time (ns) Time (ns) 100 70 7 5 500 IC/IB = 10 300 200 ts′ , Storage Time (ns) General Purpose Transistor 1.0 2.0 3.0 5.0 7.0 10 I C, Collector Current (mA) 20 30 50 70 100 200 I C, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE = 200 IC = 1.0 mA NF, Noise Figure (dB) 10 6 0 0.1 W SOURCE RESISTANCE = 1.0 k IC = 50 A m 4 f = 1.0 kHz 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 2 14 W NF, Noise Figure (dB) 12 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 SOURCE RESISTANCE = 500 IC = 100 A m 0.2 0.4 http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B 1.0 2.0 W 2 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, Frequency (kHz) R S, Source Resistance (k OHMS) Figure 9. Figure 10. 40 100 Any changing of specification will not be informed individual Page 4 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe , Output Admittance ( m mhos) 100 h fe , Current Gain 200 100 70 50 30 50 20 10 5 2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 1 10 0.1 0.2 20 10 10 7.0 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 5.0 10 Figure 12. Output Admittance h re , Voltage Feeback Ratio (X 10 –4) h ie , Input Impedance (k OHMS) Figure 11. Current Gain 0.3 5.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS h FE , DC Current Gain (Normalized) 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 15. DC Current Gain http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B Any changing of specification will not be informed individual Page 5 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor VCE , Collector Emitter Voltage (V) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B, Base Current (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25°C VBE(sat) @ IC/IB =10 1.0 V, Voltage (V) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 – 55°C TO +25°C – 0.5 – 55°C TO +25°C – 1.0 1.0 2.0 http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B 5.0 10 20 50 100 200 – 2.0 +25°C TO +125°C qVB FOR VBE(sat) – 1.5 0.2 0 +25°C TO +125°C 0.5 Coefficient (mV/ °C) 1.2 0 20 40 60 80 100 120 140 160 I C, Collector Current (mA) I C, Collector Current (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 180 200 Any changing of specification will not be informed individual Page 6 of 6