MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage VEBO 4 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Thermal Resistance Junction to Ambient Air RθJA 450 Junction Temperature Tj 150 O Storage Temperature Range TS -65 to +150 O C/W O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTA06 Characteristics at Tamb=25 OC Symbol Min. Max. Unit at IC=10mA, VCE=1V hFE 100 - - at IC=100mA, VCE=1V hFE 100 - - ICES - 100 nA ICBO - 100 nA V(BR)CBO 80 - V V(BR)CEO 80 - V V(BR) EBO 4 - V VCE(sat) - 0.25 V VBE(on) - 1.2 V fT 100 - MHz DC Current Gain Collector-Emitter Cutoff Current at VCE=60V Collector-Base Cutoff Current at VCB=80V Collector-Base Breakdown Voltage at IC=100μA Collector-Emitter Breakdown Voltage at IC=1mA Emitter-Base Breakdown Voltage at IE=100μA Collector Saturation Voltage at IC=100mA, IB=10mA Base-Emitter On Voltage at IC=100mA, VCE=1V Gain-Bandwidth Product at IC=10mA, VCE=2V, f=100MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005