SHENZHENFREESCALE SQ3410EV

SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.0175
RDS(on) () at VGS = 4.5 V
0.0213
ID (A)
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
8
Configuration
TSOP-6
Top V iew
3 mm
• 100 % Rg and UIS Tested
Single
1
6
2
5
3
4
• Material categorization:
For definitions of compliance please see
(1, 2, 5, 6) D
www.freescale.net.cn
(3) G
(4) S
2.85 mm
N-Channel MOSFET
Marking Code: 8Gxxx
ORDERING INFORMATION
Package
TSOP-6
Lead (Pb)-free and Halogen-free
SQ3410EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
8
6.8
IS
6.3
IDM
32
IAS
22
EAS
24
PD
UNIT
5
1.6
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
110
RthJF
30
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
1 / 11
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
30
-
-
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
10
-
-
VGS = 10 V
ID = 5 A
-
0.014
0.0175
VGS = 10 V
ID = 5 A, TJ = 125 °C
-
-
0.030
VGS = 10 V
ID = 5 A, TJ = 175 °C
-
-
0.036
VGS = 4.5 V
ID = 4 A
-
0.017
0.0213
-
25
-
-
804
1005
-
175
219
-
68
85
VDS = 15 V, ID = 5 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VDS = 15 V, f = 1 MHz
VGS = 10 V
VDS = 15 V, ID = 5 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 3 
ID  5 A, VGEN = 10 V, Rg = 1 
tf
-
14
21
-
2.4
-
-
2.2
-
1.5
3.91
7
-
9
14
-
12
18
-
20
30
-
7
11
pF
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 5 A, VGS = 0 V
-
-
32
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2 / 11
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 10 V thru 4 V
24
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
VGS = 3 V
6
18
12
TC = 25 °C
6
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
50
2.0
TC = - 55 °C
TC = 25 °C
40
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
0.8
TC = 25 °C
0.4
TC = 125 °C
TC = - 55 °C
0
1
2
3
4
30
TC = 125 °C
20
10
0
0.0
0
5
2
4
6
8
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.05
1200
0.04
960
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
5
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
10
12
Ciss
720
480
Coss
240
Crss
0.00
0
0
6
12
18
24
ID - Drain Current (A)
On-Resistance vs. Drain Current
3 / 11
30
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Capacitance
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30
SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
ID = 5 A
ID = 5 A
8
VGS = 10 V
1.7
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
10
6
VDS = 15 V
4
2
1.4
VGS = 4.5 V
1.1
0.8
0
0
4
8
12
16
0.5
- 50 - 25
20
0
Gate Charge
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
IS - Source Current (A)
100
125
150
175
0.15
10
1
TJ = 25 °C
0.1
0.01
0.12
0.09
0.06
TJ = 150 °C
0.03
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
6
8
10
On-Resistance vs. Gate-to-Source Voltage
40
0.2
- 0.1
ID = 5 mA
- 0.4
ID = 250 μA
- 0.7
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
0.5
- 1.0
- 50 - 25
4
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
VGS(th) Variance (V)
75
On-Resistance vs. Junction Temperature
100
4 / 11
50
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
0.001
0.0
25
38
ID = 1 mA
36
34
32
30
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
100 μs
ID - Drain Current (A)
10
1 ms
ID Limited
1
10 ms
Limited by RDS(on)*
0.1
100 ms
1 s, 10 s, DC
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 / 11
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6 / 11
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
7 / 11
INCHES
7 Nom
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOTR TSOP-6 Power MOSFETs
Surface mounted power MOSFET packaging has been based on
integrated circuit and small signal packages. Those packages
have been modified to provide the improvements in heat transfer
required by power MOSFETs. Leadframe materials and design,
molding compounds, and die attach materials have been
changed. What has remained the same is the footprint of the
packages.
The basis of the pad design for surface mounted power MOSFET
is the basic footprint for the package. For the TSOP-6 package
outline drawing see www.freescale.net.cn and see
www.freescale.net.cn for the minimum pad footprint.
In converting the footprint to the pad set for a power MOSFET, you
must remember that not only do you want to make electrical
connection to the package, but you must made thermal connection
and provide a means to draw heat from the package, and move it
away from the package.
In the case of the TSOP-6 package, the electrical connections are
very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and
are connected together. For a small signal device or integrated
circuit, typical connections would be made with traces that are
0.020 inches wide. Since the drain pins serve the additional
function of providing the thermal connection to the package, this
level of connection is inadequate. The total cross section of the
copper may be adequate to carry the current required for the
application, but it presents a large thermal impedance. Also, heat
spreads in a circular fashion from the heat source. In this case the
drain pins are the heat sources when looking at heat spread on the
PC board.
Since surface mounted packages are small, and reflow soldering
is the most common form of soldering for surface mount
components, “thermal” connections from the planar copper to the
pads have not been used. Even if additional planar copper area is
used, there should be no problems in the soldering process. The
actual solder connections are defined by the solder mask
openings. By combining the basic footprint with the copper plane
on the drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder reflow
reliability requirements. Devices are subjected to solder reflow as a
test preconditioning and are then reliability-tested using
temperature cycle, bias humidity, HAST, or pressure pot. The
solder reflow temperature profile used, and the temperatures and
time duration, are shown in Figures 2 and 3.
Figure 1 shows the copper spreading recommended footprint for
the TSOP-6 package. This pattern shows the starting point for
utilizing the board area available for the heat spreading copper. To
create this pattern, a plane of copper overlays the basic pattern on
pins 1,2,5, and 6. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. Notice that the
planar copper is shaped like a “T” to move heat away from the
drain leads in all directions. This pattern uses all the available area
underneath the body for this purpose.
0.167
4.25
0.074
1.875
0.014
0.35
0.122
3.1
0.026
0.65
0.049
1.25
0.049
1.25
0.010
0.25
FIGURE 1. Recommended Copper Spreading Footprint
8 / 11
Ramp-Up Rate
+6_C/Second Maximum
Temperature @ 155 " 15_C
120 Seconds Maximum
Temperature Above 180_C
70 − 180 Seconds
Maximum Temperature
240 +5/−0_C
Time at Maximum Temperature
20 − 40 Seconds
Ramp-Down Rate
+6_C/Second Maximum
FIGURE 2. Solder Reflow Temperature Profile
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
10 s (max)
255 − 260_C
1X4_C/s (max)
3-6_C/s (max)
217_C
140 − 170_C
60 s (max)
60-120 s (min)
Pre-Heating Zone
3_C/s (max)
Reflow Zone
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
THERMAL PERFORMANCE
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.1 A
1.4
rDS(on) − On-Resiistance
(Normalized)
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rqjc, or the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
1.2
1.0
0.8
0.6
−50
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
−25
0
25
50
75
100
125
TJ − Junction Temperature (_C)
FIGURE 4. Si3434DV
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
9 / 11
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150
SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
0.020
0.019
(0.508)
(0.493)
(1.626)
0.064
0.028
0.039
(1.001)
(0.699)
(3.023)
0.119
(2.510)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
10 / 11
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SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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