39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � � � � � 30V/13A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V 30V/10A, RDS(ON) = 12mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STN4392 YA Year Code Y：Year Process Code A：Process STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 13 10 A IDM 50 A IS 5.6 A PD 2.5 1.6 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=30V,VGS=0V 1 VDS=30V,VGS=0V TJ=125℃ 100 uA 8 12 mΩ Zero Gate Voltage Drain Current IDSS Drain-source OnResistance RDS(on) VGS=10V,ID=13A VGS=4.5V,ID=10A Forward Transconductance gfs VDS=15V,ID=20A Diode Forward Voltage VSD IS=13A,VGS=0V 6 9 10 S 1.0 1.5 12 20 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=15V,VGS=10V ID≡13A 4 nC 5 1500 VDS =25V,VGS=0V F=1MHz 320 pF 200 VDD=15V,RL=15Ω ID=13A,VGS=10V RG=2.5Ω 8 12 10 15 18 30 6 9 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1