TC1101V REV6_20070502 Low Noise and Medium Power GaAs FETs FEATURES Via holes for source grounding PHOTO ENLARGEMENT Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability Tight Vp ranges control High RF input power handling capability 100 % DC Tested DESCRIPTION The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions NF Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz MIN P1dB Output Power at 1dB Gain Compression Point, f = 12GHz, VDS = 6 V, IDS = 25 mA TYP MAX UNIT 0.5 0.7 dB 11 13 dB 17.5 18.5 dBm 14 GL Linear Power Gain, f = 12GHz, VDS = 6 V, IDS = 25 mA 15 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 48 mA gm Transconductance at VDS = 2 V, VGS = 0 V 55 mS -1.0* Volts 12 Volts 180 °C/W VP Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =0.08 mA 9 Thermal Resistance Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups: (1) TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V (3)TC1101VP0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA Symbol Parameter Rating VDS Drain-Source Voltage 7.0 V VGS Gate-Source Voltage -3.0 V IDS Drain Current IDSS IGS Gate Current 160 µA Pin RF Input Power, CW 18 dBm PT Continuous Dissipation 250 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Frequency (GHz) 2 NFopt (dB) 0.34 GA (dB) 21.2 4 0.36 19.3 0.83 30 0.54 6 0.38 17.5 0.68 50 0.42 8 0.42 15.9 0.51 75 0.30 10 0.48 14.4 0.38 106 0.18 12 0.54 13.2 0.28 145 0.14 14 0.63 12.7 0.25 -168 0.12 16 0.76 12.5 0.31 -111 0.17 18 0.94 12.2 0.49 -45 0.36 Γopt MAG ANG 0.97 14 Rn/50 0.63 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/2 TC1101V REV6_20070502 CHIP DIMENSIONS 2906 12 Units: Micrometers Chip Thickness: 55 D 2506 12 Gate Pad: 55 x 50 Drain Pad: 55 x 50 S G S Source Pad: 55 x 60 CHIP HANDLING DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C ±5°C ; Handling Tool : Tweezers ; Time : less than 1min . WIRE BONDING : The recommended wire bond method is thermocompression bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force : 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/2