Product specification 2SB1198K SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE(sat) .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage V EBO -5 Collector Current IC -0.5 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ Storage Temperature range Ts tg 150 Unit V ℃ -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Collecto- base breakdown voltage V CBO Ic= -50 µA， IE =0 -80 Collector- emitter breakdown voltage V CEO Ic= -2 mA， IB=0 -80 Emitter - base breakdown voltage V EBO IE = -50μA ， IC =0 -5 Collector-base cut-off current ICBO V CB= Emitter cut-off current I EBO V EB = -4V , IC=0 h FE V CE= -3V, IC= -100mA DC current gain VCE(sat) Collector-emitter saturation voltage Collector output capacitance Cob Transition frequency fT -50 V , Typ Max Unit V IE=0 -0.5 uA -0.5 120 390 IC=-0.5A, I B=-50mA -0.2 V CB= ?10V, IE =0mA, f=1MHz 11 -0.5 PF V V CE= -10V, IE = 50mA,f=100MHz 180 MHz ■ Classification of hfe(1) Rank Q R hFE 120-270 180-390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SB1198K ■ Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 2 of 2