TYSEMI 2SB1574

Product specification
2SB1574
TO-252
6.50
+0.2
5.30-0.2
Features
Unit: mm
2.30
+0.1
-0.1
+0.15
1.50 -0.15
+0.15
-0.15
+0.8
0.50-0.7
Possible to tsolder radiation fin directly to printed circuit boad.
0.127
max
Large collector current IC.
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
High collector-emitter voltage (Base open) VCEO.
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High collector-base voltage (Emitter open) VCBO.
+0.15
0.50 -0.15
Type with universal characteristics.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-2
A
Peak collector current
ICP
-3
A
Collector power dissipation
PC
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-50
V
Collector-emitter voltage
VCEO
IC = -1 mA, IB = 0
-50
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-5
V
Collector-base cutoff curent
ICBO
VCB = -10 V,IE = 0
Forward current transfer ratio
hFE
-0.1
VCE = -2 V, IC = -200 mA
120
VCE = -2 V, IC = -1A
60
340
Collector-emitter saturation voltage
VCE(sat) IC = -1 A, IB = -50 mA
-0.2
-0.3
Base-emitter saturation voltage
VBE(sat) IC = -1 A, IB = -50 mA
-0.85
-1.2
Transition frequency
fT
Collector output capacitance
Cob
VCE = -10 V, IC = -50 mA , f = 200 MHz
80
VCB = -10V , IE = 0 , f = 1.0MHz
45
ìA
V
V
V
MHz
60
pF
hFE Classification
Rank
R
S
hFE
120 240
170 340
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1