IC SMD Type Product specification 2SK3634 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High voltage: VDSS = 200 V Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 3.0 A) +0.15 0.50-0.15 RDS(on) = 0.60 30 V +0.2 9.70-0.2 Gate voltage rating: 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 30 V ID 6.0 A Idp * 18 A Drain current Power dissipation TC=25 20 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=200V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=3.0A 2 RDS(on) VGS=10V,ID=3.0A Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ Max 10 10 3.5 4 0.47 Ciss VDS=10V,VGS=0,f=1MHZ 4.5 Unit A A V S 0.60 270 pF Output capacitance Coss 75 pF Reverse transfer capacitance Crss 33 pF Turn-on delay time ton 4 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=3.0A,VGS(on)=10V,RG=0 ,VDD=100V VDD = 160V VGS = 10 V ID = 6.0A [email protected] 8 ns 14 ns 6 ns 9 nC 1.5 nC 4.5 nC 4008-318-123 1 of 1