Transistors MOSFET IC SMD Type Product specification 2SK3902 TO-263 +0.1 1.27-0.1 Features Low On-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1200 pF TYP. +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 8.7-0.2 RDS(on)2 = 26 mÙ MAX. (VGS = 4.5 V, ID = 15A) 5.60 RDS(on)1 = 21mÙ MAX. (VGS = 10 V, ID = 15A) 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 60 Gate to source voltage VGSS 20 V ID 30 A 90 A Drain current Idp * Power dissipation TA=25 1.5 PD V W 45 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=15A 9.5 19 RDS(on)1 VGS=10V,ID=15A RDS(on)2 VGS=4.5V,ID=15A Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Max 10 10 VDS=10V,VGS=0,f=1MHZ 2.5 Unit A A V S 16.8 21 mÙ 19.5 26 mÙ 1200 pF 250 pF Reverse transfer capacitance Crss 85 pF Turn-on delay time ton 10 ns Rise time tr 4 ns Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=15A,VGS(on)=10V,RG=0 ,VDD=30V VDD = 48V VGS = 10 V ID =30A [email protected] 37 ns 4 ns 25 nC 4.5 nC 6.0 nC 4008-318-123 1 of 1