Transistors IC SMD Type Product specification FMMT4126 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -4 V Collector current IC -200 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification FMMT4126 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA, -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, -25 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, -4 V Collector cutoff current Emitter cut-off current ICBO VCE=-20V IEBO -50 nA VEB=-3V -50 nA Collector-emitter saturation voltage * VCE(sat) IC=-50mA, IB=-5mA -0.4 V Base-emitter saturation voltage * VBE(sat) IC=-50mA, IB=-5mA -0.95 V DC current gain * hFE Current-gain-bandwidth product fT IC=-2mA, VCE=-1V 120 IC=-10mA, VCE=-20V f=100MHz 250 360 MHz VCB=-5V, IE=0, f=140KHz 4.5 pF Cibo VBE=-0.5V, IC=0, f=140KHz 10 pF Noise figure NF VCE=-5V IC=-200µA,Rg=-2K? f=30Hz to 15KHz at -3dB points 4 dB Small signal current transfer hfe IC=-2mA, VCE=-1V, f=1KHz 25 ns 18 ns 140 ns 15 ns Output capacitance Cobo Input capacitance Delay time td Rise time tr Storage time ts Fall time tf * Pulse test: tp 300 ìs; d 120 180 VCC=-3V, IC=-10mA,IB1=-1mA VBE(off)=-0.5V VCC=-3V, IC=-10mA IB1= IB2=-1mA 0.02. Marking Marking ZE http://www.twtysemi.com [email protected] 4008-318-123 2 of 2