Product specification FMMT5209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 4.5 V Collector current IC 50 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Collector-base cut-off current ICBO Emitter-base current IEBO Testconditons Min Typ Max Unit VCB=35V, IE=0 50 nA VEB=3V, IC=0 50 nA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 700 mV Base-emitter ON voltage VBE(on) IC=1mA, VCE=5V 850 mV DC current gain hFE Current-gain-bandwidth product Small signal current transfer ratio Noise figure fT hfe NF Output capacitance Cobo IC=100ìA, VCE=5V 100 IC=0.5mA, VCE=5V,f=20MHz 30 IC=1mA, VCE=5V, f=1KHz 150 300 MHz 600 IC=200ìA, VCE=5V, Rg=2KÙ, f=30Hz to 15KHz at -3dB points 3 dB IC=200ìA, VCE=5V, Rg=2KÙ, f=1KHz to f=200Hz 4 dB VCB=5V, IE=0, f=140KHz 4 pF Marking Marking 2Q http://www.twtysemi.com [email protected] 4008-318-123 1 of 1