TYSEMI KDS8958

Transistors
IC
SMD Type
Product specification
KDS8958
Features
N-Channel
7.0 A, 30 V
RDS(ON) = 0.028
@ VGS = 10 V
RDS(ON) = 0.040
@ VGS =4.5V
P-Channel
-5 A, -30 V RDS(ON) = 0.052
@ VGS =- 10 V
RDS(ON) = 0.080
@ VGS =-4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Absolute Maximum Ratings Ta = 25
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
Parameter
VDSS
30
30
V
Gate to Source Voltage
VGS
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation
PD
7
-5
A
20
-20
A
2
PD
1
TJ, TSTG
-55 to 150
W
W
0.9
(Note 1c)
Operating and Storage Temperature
V
1.6
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
20
20
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
78
/W
Thermal Resistance Junction to Case
R
JC
40
/W
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(Note 1)
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4008-318-123
1 of 3
Transistors
IC
SMD Type
Product specification
KDS8958
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
IDSS
Gate-Body Leakage
IGSS
VGS(th)
A, Referenced to 25
Min
N-Ch
30
P-Ch
-30
25
P-Ch
-22
N-Ch
1
P-Ch
-1
VGS =
20V, VDS = 0 V
N-Ch
100
VGS =
20 V, VDS = 0 V
P-Ch
100
VDS = VGS, ID = 250
A
VDS = VGS, ID = -250
A
A, Referenced to 25
A, Referenced to 25
N-Ch
1
1.6
3
P-Ch
-1
-1.7
-3
N-Ch
-4.3
P-Ch
4
Static Drain-Source On-Resistance
RDS(on)
28
32
42
VGS = 4.5 V, ID =6 A
27
40
VGS = -10 V, ID =-5 A
41
52
VGS = -10 V, ID =-5 A,TJ = 125
N-Ch
P-Ch
VGS = -4.5 V, ID =-4A
On-State Drain Current
Forward Transconductance
ID(on)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
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Qgd
58
78
58
80
VGS = 10 V, VDS = 5V
N-Ch
20
VGS = -10 V, VDS = -5V
P-Ch
-20
VDS = 5V, ID = 7A
N-Ch
19
VDS = -5V, ID = -5A
P-Ch
11
N-Channel
N-Ch
789
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
P-Ch
690
N-Ch
173
P-Ch
306
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
N-Ch
66
P-Ch
77
pF
pF
N-Ch
6
12
P-Ch
6.7
13.4
N-Ch
10
18
P-Ch
9.7
19.4
P-Channel
N-Ch
18
29
VDD = -10 V, ID = -1 A,
P-Ch
19.8
35.6
(Note 2)
N-Ch
5
12
P-Ch
12.3
22.2
N-Channel
N-Ch
16
26
VDS =15V,ID=7A,VGS=10V(Note 2)
P-Ch
14
23
N-Ch
2.5
P-Channel
P-Ch
2.2
VDS=-15V,ID=-5A,VGS=-10V(Note 2)
N-Ch
2.1
P-Ch
1.9
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m
pF
VDD = 10 V, ID = 1 A,
VGS = -10 V, RGEN = 6
V
S
N-Channel
(Note 2)
nA
A
P-Channel
VGS = 10 V, RGEN = 6
A
mV/
21
VGS = 10 V, ID = 7 A,TJ = 125
Unit
mV/
VDS = 24V, VGS = 0 V
ID = -250
RDS(on)
Max
V
N-Ch
VGS = 10 V, ID =7A
Static Drain-Source On-Resistance
Typ
VDS = -24 V, VGS = 0 V
ID = 250
Gate Threshold Voltage Temperature
Coefficient
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Testconditons
Symbol
4008-318-123
ns
ns
ns
ns
nC
nC
nC
2 of 3
Transistors
IC
SMD Type
Product specification
KDS8958
Electrical Characteristics Ta = 25
Parameter
Symbol
Maximum Continuous Drain-Source
Diode Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
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Testconditons
Min
Typ
Max
N-Ch
1.3
P-Ch
-1.3
VGS = 0 V, IS = 1.3A (Not 2)
N-Ch
0.74
1.2
VGS = 0 V, IS = -1.3A (Not 2)
P-Ch
-0.76
-1.2
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Unit
A
V
3 of 3