Transistors IC MOSFET SMD Type Product specification KI1917 SOT-363 ■ Features Unit: mm ● RDS(on) = 370mΩ@ VGS= -4.5V 6 5 4 2 3 1 ● Lead temperature for soldering :TL =260±5℃ +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1 0.1max ● P b -Free Packages are Available 0.36 +0.15 2.3-0.15 ● ESD Protected: 3000 V +0.1 1.25-0.1 ● VDS = -12V,ID = -1.0A 0.525 +0.1 1.3-0.1 0.65 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ratings Unit Drain-Source Voltage VD S -12 V Gate-Source Voltage VG S ±12 V Continuous Drain Current TJ = 150℃ (Note 1) TA =25°C ID TA =85°C Pulsed Drain Current Continuous Diode Current (Diode Conduction) (Note 1) Maximum Power Dissipation TA =25°C (Note 1) TA=85 °C Maximum Junction-to-Foot(Drain) Maximum Junction-to-Ambient (Note 1) A -0.73 I DM -3 A IS -0.47 A PD 0.57 W 0.3 100 ℃ /W RθJA 220 ℃/W TJ, Tst g -55 to 150 ℃ RθJF Operating Junction and Storage Temperature Range -1.0 Note: 1. Surface Mounted on 1” x 1” FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC MOSFET SMD Type Product specification KI1917 ■ Electrical Characteristics Tj = 25℃ unless otherwise noted Parameter Symbol Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance (Note 2) On-State Drain Current (Note 2) Forward Transconductance (Note 2) Test conditions Min V GS = 0 V, I D = -100 µA Typ Max -12 V V DS = -9.6V , V GS = 0V 1.0 V DS = -9.6V , V GS = 0V , TJ =85℃ 5.0 VG S(th) V DS = V G S , ID = -100uA IGSS V DS = 0V , V GS = ±12V ±10 V GS = -4.5V , ID = -1.0A 370 V GS = -2.5V , ID = -0.81A 575 V GS = -1.8V , ID = -0.2A 800 RDS(on) ID(on) gfs -0.45 V DS = -5V , VG S = -4.5V V DS = -10V , ID 1.7 Gate-Source Charge (Note 3) Q gs Gate-Drain Charge (Note 3) Q gd 0.31 Turn-On Delay Time (Note 3) t d(on) 0.17 0.26 0.47 0.71 0.96 1.4 1 1.5 tr Turn-Off Delay Time (Note 3) Fall Time (Note 3) Diode Forward Voltage t d(off) 1.3 V DS = -6V , RL = 12Ω , ID= -0.5 A V GS = -4.5V , R GEN = 6Ω tf (Note 2) V SD mΩ S Qg Rise Time (Note 3) µA A Total Gate Charge (Note 3) V DS = -6 V, VG S = -4.5 V, ID = -1.0 A µA V -2 = -1.0A Unit 2.0 nC 0.31 IS = -0.47 A, VG S = 0 V 1.2 µs V Notes: 2. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% . 3. Guaranteed by design, not subject to production testing. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2