IC MOSFET SMD Type Product specification KI2306 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 ■ Features ● RDS(ON) =0.030Ω@V GS =10V 1 0.55 ● RDS(ON) =0.052Ω@V GS =2.5V +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) =0.035Ω@V GS =4.5V 0.4 3 2 +0.1 0.95-0.1 +0.2 1.9-0.2 +0.2 1.1 -0.1 D +0.05 0.1-0.01 1.Base 1. Gate 0-0.1 G +0.1 0.38-0.1 2.Emitter 2. Source 3. Drain 3.collector S ■ Absolute Maximum Ratings Ta = 25℃ Unless Otherwise Noted Parameter Symbol 5sec Steady State Drain-source voltage V DS 30 Gate-source voltage V GS ±12 Continuous drain current @TA =25℃ ID @ TA=70 ℃ Pulsed drain current Maximum Power dissipation @TA=25℃ PD @ TA =70 ℃ Maximum Body-Diode Continuous Current Is Thermal Resistance-Junction to Case (Note 1) Maximum Junction to Ambient (Note 1) R θJC t ≤10 sec RθJA Steady State Operating junction and storage temperature range V 4 3.16 3.5 2.7 IDM Unit A 20 1.25 0.75 0.8 0.48 1.04 0.62 W A 65 ℃/W 70 95 Tj,Tstg -55 to +150 ℃ Note: 1. The device mounted on 1in2 FR4 board with 2 oz copper http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 IC MOSFET SMD Type Product specification KI2306 ■ Electrical Characteristics Ta = 25℃ Unless Otherwise Noted Parameter Symbol Drain-source breakdown voltage V DSS Zero gate voltage drain current IDSS Testconditons Gate threshold voltage V DS = 0 V, VGS = ± 12V VGS(th) V DS = V GS , I D = 250 µA = 10 V, ID Max Unit V 1 = 0 V, TJ = 55 ℃ I GSS V GS Drain-source on-state resistance (Note 2) Typ 30 V DS = 30V, VGS = 0 V V DS =30V, VGS Gate-body leakage Min V GS = 0 V, ID = 250 µA µA 10 0.7 ± 100 nA 1.4 V = 4.0 A 0.024 0.030 RDS(ON) V GS = 4.5 V, ID =3.5 A 0.027 0.035 V GS = 2.5V, I D =2.8 A Ω 0.037 0.052 ID(on) V DS ≥ 5 V, V GS = 10 V Forward transconductance g fs V DS = 4.5 V, ID = 4.0 A 6.9 S gate charge Qg V DS = 15V ,VGS =10V , ID= 4.0A 13 nC V DS = 15V ,VGS = 4.5 V , ID= 4.0 A 2.9 On-state drain current (Note 2) 20 A Total gate charge Qg Gate-source charge Q gs Gate-drain charge Qgd Gate Resistance Rg Input capacitance C iss Output capacitance Coss Reverse transfer capacitance Crss 15 td(on) 9 Turn-on time tr Turn-off time td(off) 6.3 2.4 f = 1 MHz 0.6 V SD Ω 380 V DS = 15V ,VGS = 0 , f = 1 MHz V DD = 15V , R L = 15Ω , ID = 1A , VGEN =-10V , RG = 6Ω pF 64 14 ns 33 tf Diode Forward Voltage nC 3 IS =1.25A, V GS=0V 0.8 1.2 V Notes: 2. Pulse test: pulse width ≦300us, duty cycle ≦2% http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 IC MOSFET SMD Type Product specification KI2306 ■ Typical Characteristics Gate Charge V GS - Gate-to-Source Voltage (V) 10 VDS = 15V ID = 3.5 A 8 6 4 2 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) http://www.twtysemi.com [email protected] 4008-318-123 3 of 4 IC MOSFET SMD Type Product specification KI2306 ■ Typical Characteristics Single Pulse Power 12 10 Power (W) 8 6 TA = 25_C 4 2 0 0.01 0.1 1 10 100 500 Time (sec) http://www.twtysemi.com [email protected] 4008-318-123 4 of 4