IC SMD Type Product specification 5N20V TSSOP-8 ■ Features Unit: mm ● RDS(ON)≤40mΩ @VGS=4.5V ● RDS(ON)≤45mΩ @VGS=2.7V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 5 A Drain-Current -Continuous -Pulsed Power Dissipation (NOTE 1) IDM 20 A (NOTE 2) PD 1.5 W RθJA 83 ℃/W Tj.Tstg -55 to 150 ℃ Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. When Mounted on minimum recommended footprint. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC SMD Type Product specification 5N20V ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol Test conditions VDSS VGS=0V,ID=1mA Zero Gate Voltage Drain Current IDSS VDS=18V,VGS=0V Gate-Body Leakage IGSS VGS=±12V,VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS,,ID=250μA Drain- Source on-state Resistance RDS(ON) Input Capacitance Min Typ Max 20 Unit V 1 μA ±100 nA 0.6 V VGS=4.5V,ID=2.5A 30 40 mΩ VGS=2.7V,ID=2.5A 37 45 mΩ Ciss VDS = 15V, VGS = 0V,f =1.0MHZ 460 pF 200 pF 50 pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time tD(on) 7 ns tr 33 ns 27 ns Rise Time Turn-Off Delay Time Fall Time tD(off) VDD=10V,ID=2.5A,VGS=4.5V, RGEN=4.7Ω tf 10 Total Gate Charge Qg 8.5 Gate-S ource Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltage VSD Diode Forward Current IS http://www.twtysemi.com VDS = 10V, ID = 4.5A,VGS = 4.5V ns 11.5 1.8 nC 2.4 IS=5A, VGS=0 [email protected] 4008-318-123 nC nC 1.2 V 5 A 2 of 2