IC IC SMD Type Product specification KPA1750 Features Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A) RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A) Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS -20 V Gate to Source Voltage VGSS 20 V ID(DC) 3.5 A ID(pulse) 14 A Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 *2 Total Power DissipationTa = 25 *2 PT 1.7 W 2.0 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 *1 PW 10 s, Duty cycle 1% *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KPA1750 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit RDS(on)1 VDS = -10V, ID = -1.8 A 0.065 0.090 m RDS(on)2 VGS = -4V, ID = -1.8 A 0.125 0.180 m VGS(off) VDS = -10 V, ID = -1 mA -1.0 -1.7 Forward Transfer Admittance | yfs | VDS = -10 V, ID = -1.8A 2.0 4.4 Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 Gate Leakage Current IGSS VGS = Drain to Source On-state Resistance Gate Cut-off Voltage 10 A A pF 385 pF 105 pF td(on) 10 ns tr 110 ns 340 ns Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time Turn-off Delay Time S -10 20V, VDS = 0 V 540 Input Capacitance Rise Time -2.5 td(off) VDS = -10 V, VGS = 0, f = 1 MHz ID = -1.8 A, VGS(on) = -10 V, VDD =-10 V,RG = 10 tf 230 ns Total Gate Charge QG 18 nC Gate to Source Charge QGS 2.0 nC Fall Time Gate to Drain Charge Body Diode forward Voltage ID = -3.5A, VDD = -16V, VGS = -10 V QGD VF(S-D) 5.1 nC IF = 3.5 A, VGS = 0 0.8 V Reverse Recovery Time trr IF = 3.5 A, VGS = 0 V 160 ns Reverse Recovery Charge Qrr di/dt = 100 A/ 310 nC http://www.twtysemi.com s [email protected] 4008-318-123 2 of 2