Transistors IC IC SMD Type Product specification KPA2790GR Features Low on-state resistance N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m MAX. (VGS = -10 V, ID = -3 A) MAX. (VGS = -4.5 V, ID = -3 A) Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Symbol N-Channel P- Channel Unit VDSS 30 -30 V Gate to Source Voltage (VDS = 0 V) VGSS 20 20 V Drain Current (DC) ID(DC) 6 6 A ID(pulse) 24 24 A Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 PT 1.7 W Total Power Dissipation (2 units) *2 PT 2 W Channel Temperature Tch 150 Storage Temperature Tstg Single Avalanche Current *3 IAS 6 -6 A Single Avalanche Energy *3 EAS 3.6 3.6 mJ *1 PW 10 s, Duty Cycle -55 to +150 1% *2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm *3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25 http://www.twtysemi.com , L = 100 H, VGS = VGSS [email protected] 0V 4008-318-123 1 of 2 IC Transistors IC SMD Type Product specification KPA2790GR Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) | yfs | -10 VGS = 16 V, VDS = 0 V N-Ch 10 VGS = 16 V, VDS = 0 V P- Ch 10 VDS = 10 V, ID = 1 mA N-Ch 1.5 2.5 VDS = -10 V, ID = -1 mA P- Ch -1.0 -2.5 VDS = 10 V, ID = 3 A N-Ch 2 VDS = -10 V, ID = -3 A P- Ch 2 RDS(on)3 V S m 40 m VGS = 4.0 V, ID = 3 A 34 53 m RDS(on)1 VGS = -10 V, ID = -3 A 43 60 m RDS(on)2 VGS = -4.5 V, ID = -3 A P- Ch 58 80 m RDS(on)3 VGS = -4.0 V, ID = -3 A 65 110 m N-Channel N-Ch 500 VDS = 10 V,VGS = 0 V,f = 1 MHz P- Ch 460 N-Ch 135 P- Ch 130 td(on) tr td(off) tf QG Gate to Source Charge QGS Gate to Drain Charge QGD VF(S-D) N-Ch P- Channel VDS = -10 V,VGS = 0 V,f = 1 MHz N-Ch 77 P- Ch 77 N-Channel N-Ch 9.2 VDD = 15 V, ID = 3 A,VGS = 10 V P- Ch 8.5 RG = 10 N-Ch 8.8 P- Ch 4.8 P- Channel N-Ch 28 VDD = -15 V, ID = -3 A,VGS = -10 V P- Ch 42 N-Ch 7.4 P- Ch 19 N-Channel N-Ch 12.6 ID = 6 A,VDD = 24 V,VGS = 10 V P- Ch 11 N-Ch 1.7 P- Channel P- Ch 1.7 ID = -6 A,VDD = -24 V,VGS = -10 V N-Ch 3.8 P- Ch 3.3 RG = 10 IF = 6 A, VGS = 0 V N-Ch 0.85 IF = 6 A, VGS = 0 V P- Ch 0.92 N-Ch 18 P- Ch 21 trr IF = 6 A, VGS = 0 V,di/dt = 100 A/ http://www.twtysemi.com A 28 Turn-on Delay Time Reverse Recovery Charge A 28 Crss Reverse Recovery Time P- Ch Unit 21 Reverse Transfer Capacitance Body Diode Forward Voltage Note VDS = -30 V, VGS = 0 V VGS = 4.5 V, ID = 3 A Coss Total Gate Charge Max 10 VGS = 10 V, ID = 3 A Output Capacitance Fall Time Typ N-Ch RDS(on)2 Ciss Turn-off Delay Time Min VDS = 30 V, VGS = 0 V RDS(on)1 Input Capacitance Rise Time Testconditons Symbol Qrr [email protected] s N-Ch 11 P- Ch 12 4008-318-123 pF pF pF ns ns ns ns nC nC nC V ns nC 2 of 2