Product specification NTR4503N Power MOSFET ID MAX 85 m @ 10 V 30 V Features • • • • RDS(on) TYP V(BR)DSS 30 V, 2.5 A, Single N−Channel, SOT−23 2.5 A 105 m @ 4.5 V Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) Pb−Free Package is Available N−Channel D Applications • DC−DC Conversion • Load/Power Switch for Portables • Load/Power Switch for Computing G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.0 A Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C 1.5 t ≤ 10 s TA = 25°C 2.5 Power Dissipation (Note 1) Steady State TA = 25°C Continuous Drain Current (Note 2) Steady State TA = 25°C Power Dissipation (Note 2) ID TA = 85°C TA = 25°C TR3 W A 1.5 SOT−23 CASE 318 STYLE 21 1 Gate 1.1 W tp = 10 s IDM 6.0 A C = 100 pF, RS = 1500 ESD 125 V TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 2.0 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter 3 Drain 2 0.73 0.42 Operating Junction and Storage Temperature 3 1 PD Pulsed Drain Current ESD Capability (Note 3) PD MARKING DIAGRAM/ PIN ASSIGNMENT Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RJA 170 °C/W Junction−to−Ambient − t < 10 s (Note 1) RJA 100 Junction−to−Ambient − Steady State (Note 2) RJA 300 M Parameter TR3 M 2 Source = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTR4503NT1 SOT−23 3000/Tape & Reel NTR4503NT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4503NT3G SOT−23 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 in sq pad size. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0. http://www.twtysemi.com [email protected] 1 of 2 Product specification NTR4503N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 A 30 36 IDSS VGS = 0 V, VDS = 24 V 1.0 VGS = 0 V, VDS = 24 V, TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V 100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 A 1.75 3.0 V Drain−to−Source On−Resistance RDS(on) ( ) VGS = 10 V, ID = 2.5 A 85 110 m VGS = 4.5 V, ID = 2.0 A 105 140 VDS = 4.5 V, ID = 2.5 A 5.3 S 135 pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V A TY CHARACTERISTICS (Note 4) Forward Transconductance gFS 1.0 CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 15 V 52 15 VGS = 0 V, f = 1.0 MHz, VDS = 24 V 130 250 42 75 Output Capacitance Coss Reverse Transfer Capacitance Crss 13 25 Total Gate Charge QG(TOT) 3.6 7.0 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.7 Total Gate Charge QG(TOT) 1.9 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 15 V, ID = 2.5 A VGS = 4.5 V, VDS = 24 V, ID = 2.5 A pF nC 0.3 0.6 nC 0.3 0.6 0.9 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) 5.8 12 5.8 10 14 25 tf 1.6 5.0 td(on) 4.8 tr td(off) tr td(off) VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 VGS = 10 V, VDD = 24 V, ID = 2.5 A, RG = 2.5 tf ns ns 6.7 13.6 1.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A 0.85 1.2 V Reverse Recovery Time tRR ns QRR VGS = 0 V, IS = 2.0 A, dIS/dt = 100 A/s 9.2 Reverse Recovery Charge 4.0 nC 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 2 of 2