TYSEMI SB200

Product specification
SB2100
DO-15
■ Features
● High Current Capability
● Low Power Loss, High Efficiency
● High Surge Current Capability
Dimensions in inches and (millimeters)
■ Absolute Maximum Ratings and Electrical Characteristics Ta = 25℃
Parameter
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
Rating
Unit
10
0
V
VR
RMS Reverse Voltage
Average Rectified Output Current
@TL = 75℃
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
VR(RMS)
70
V
IO
2.0
A
IFSM
50
A
0.8 5
V
rated load (JEDEC Method)
Forward Voltage @IF = 2.0A
VF
Peak Reverse Current
@TA = 25℃
At Rated DC Blocking Voltage
@TA = 100℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance
(Note 2)
Operating Junction Temperature Range
Storage Temperature Range
0.5
IR
mA
10
140
pF
RθJA
35
℃/W
Tj
-65 to +125
℃
TSTG
-65 to150
℃
Cj
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5 mm) lead length.
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Product specification
SB2100
2.5
2.0
1.5
1.0
.375" 9.5mmLEADLENGHTS
RESISTIVEORINDUCTIVELOAD
0.5
0
0
20
40
60
80
100
120
140
20
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(O), AVERAGE FORWARD CURRENT (A)
■ Typlacl Characteristics
160
TL, LEAD TEMPERATURE (°C)
SB250 - SB260
1.0
Tj = 25°C
IF Pulse Width = 300µs
0.1
0.1
Tj = 150°C
40
30
20
1.7
2.1
SB220 - SB240
SB250 - SB260
100
10
100
0.1
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.3
Tj = 25°C
f = 1.0MHz
10
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0.9
1000
Single Half Sine-Wave
(JEDEC Method)
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
10
0.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
1
SB220 - SB240
10
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
10
Tj = 100°C
1.0
Tj = 75°C
0.1
0.01
0.001
Tj = 25°C
0
20
40
60
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80
100
120
140
4008-318-123
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