WHXPCB AO4354

万和兴电子有限公司 www.whxpcb.com
AO4354
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
30V
23A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3.7mΩ
RDS(ON) (at VGS = 4.5V)
< 5.3mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±20
V
23
ID
TA=100°C
Maximum
30
14
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS
37
A
Avalanche energy L=0.1mH C
EAS
68
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TA=25°C
Junction and Storage Temperature Range
Rev0: April 2012
3.1
PD
TA=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
174
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.2
RθJA
RθJL
-55 to 150
Typ
31
59
16
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°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4354
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
5
VGS=4.5V, ID=20A
4.1
5.3
mΩ
105
0.7
1
V
4
A
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
3.7
gFS
Reverse Transfer Capacitance
nA
2.2
3
VSD
Crss
100
1.8
4.1
TJ=125°C
VDS=5V, ID=20A
Output Capacitance
µA
5
1.2
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
0.9
mΩ
S
2010
pF
898
pF
124
pF
1.8
2.7
Ω
36
49
nC
17
23
nC
6
nC
Gate Drain Charge
8
nC
Turn-On DelayTime
7.5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
4.0
ns
37.0
ns
7.5
ns
14
ns
nC
20.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: April 2012
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Page 2 of 5
AO4354
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
VDS=5V
4.5V
80
40
3.5V
10V
60
ID(A)
ID (A)
30
3V
40
20
125°C
25°C
10
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.8
5
VGS=4.5V
4
3
2
VGS=10V
1
0
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
6
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
125°C
1.0E-01
1.0E-02
2
25°C
1.0E-03
25°C
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: April 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4354
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
1000.0
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
10000
RDS(ON)
10µs
100µs
10.0
1.0
1ms
DC
10ms
0.1
TA=25°C
TJ(Max)=150°C
TC=25°C
1000
Power (W)
10µs
100.0
ID (Amps)
Ciss
100
10
TJ(Max)=150°C
TC=25°C
0.0
1
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: April 2012
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Page 4 of 5
AO4354
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev0: April 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5