ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected. Features VDS(V)=20V ID=6A (VGS=4.5V) RDS(ON)＜22mΩ (VGS=4.5V) RDS(ON)＜26mΩ (VGS=2.5V) RDS(ON)＜34mΩ (VGS=1.8V) ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V VGSS ±8 V Gate-Source Voltage O Drain Current (Continuous) * AC TA=25 C O TA=70 C Drain Current (Pulse) * B ID IDM O Power Dissipation TA=25 C O TA=70 C PD 6 4.8 A 30 1.3 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 W O C Packaging Type SOT-23-6L VER 1.2 1 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE2600B XX + H Halogen - free Pb - free GM : SOT-23-6L Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±8V, VDS=0V 10 uA Static Drain-Source On-Resistance RDS(ON) 20 V VGS=4.5V, ID=6.5A 18.3 22 VGS=2.5V, ID=5.5A 21.7 26 VGS=1.8V, ID=5A 27.3 34 0.56 1 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.4 Forward Transconductance gFS VDS=5V, ID=6.5A 13 Diode Forward Voltage VSD ISD=2.5A, VGS=0V 0.81 Maximum Body-Diode Continuous Current IS mΩ V S 1 V 2.5 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=10V, ID=8A VGS=4.5V VDS=10V, VGS=5V RGEN=3Ω, RL=1.5Ω 13.8 17.94 4.1 5.33 5.6 7.28 6.2 12.4 12.7 25.4 51.7 103.4 16 32 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, VGS=0V f=1MHz 1160 104 pF 29 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 3 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 4 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Packing Information SOT-23-6L Units: mm VER 1.2 5 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6