ACE ACE1621B

ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE1621B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits
for low voltage application such as power management of desktop computer or notebook computer power
management, DC/DC converter.
Features




VDS(V) =-30V
ID=-60A
RDS(ON)@VGS=-20V, IDS=-20A, Typ 7.5mΩ
RDS(ON)@VGS=-10V, IDS=-20A, Typ 8.5mΩ
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current * AC
TA=25℃
TA=70℃
Pulsed Drain Current * B
Power Dissipation
ID
IDM
TA=25℃
TA=70℃
PD
-60
-45
-130
100
50
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150
A
A
W
O
C
Packaging Type
TO-252
VER 1.2
1
ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1621B XX + H
Halogen - free
Pb - free
YM : TO-252
Electrical CharacteristicsTA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Drain-Source On-Resistance
V(BR)DSS
VGS=0V, ID=-250 uA
-30
VGS(th)
VDS=VGS, IDS=-250uA
-1.5
IGSS
VDS=0V,VGS=±25V
±100
nA
IDSS
VDS=-24V, VGS=0V
-1
uA
RDS(ON)
V
-1.8
-3.5
VGS=-20V, ID=-20A
7.5
9
VGS=-10V, ID=-20A
8.5
12
VGS=-4.5V, ID=-10A
14
25
Forward Transconductance
gfs
VDS=-5V,ID=-20A
30
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
VSD
ISD=-1A, VGS=0V
-0.72
IS
mΩ
S
-1.0
V
-55
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
td(on)
Turn-Off Time
td(off)
40
VDS=-15V, VGS=-10V, ID=-20A
47.2
55
10
nC
20.4
VGS=-10V, RGEN=3Ω, VDS=-15V,
RL=0.75Ω
12.4
nS
25.6
Dynamic
Input Capacitance
Ciss
Output Capacitance
REVERSE Transfer
Capacitance
Coss
3076
VGS=0V, VDS=-15V, f=1MHz
Crss
3500
603
402
pF
523
2
Note: 1. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
TO-252
Units: mm
VER 1.2
5
ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6