ACE4435B P-Channel Enhancement Mode Field Effect Transistor Description The ACE4435B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features • • • • • VDS(V)=-30V ID=-6.5A (VGS=-10V) RDS(ON)＜40mΩ (VGS=-10V) RDS(ON)＜50mΩ (VGS=-4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -30 V VGS ±20 V Gate-Source Voltage O Drain Current (Continuous) * AC TA=25 C TA=70 OC Drain Current (Pulse) * B Power Dissipation ID IDM TA=25 OC O TA=70 C Operating and Storage Temperature Range PD -6.5 -5.3 -30 3 2.1 TJ,TSTG -55 to 150 A A W O C Packaging Type SOP-8 Ordering information ACE4435B FM + H Halogen - free Pb - free FM : SOP-8 VER 1.1 1 ACE4435B P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250µA Gate Leakage Current IGSS VGS=±20V, VDS=0V Static Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current -30 -1.2 V -1.4 -1 uA -2.7 V 100 nA VGS=-10V, ID=-5.7A 30 40 VGS=-4.5V, ID=-4.4A 38 50 gFS VGS=-5V, ID=-5.7A 11 VSD ISD=-2.3A, VGS=0V -0.82 IS mΩ S -1.2 V -2.3 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-Off Delay Time td(off) VGS=-10V VDS=-15V, ID=-6A VGS=-10V,VDS=-15V, RL=15Ω, RGEN=6Ω 18.3 23.79 2.4 3.12 3.1 4.03 12.4 24.8 41.1 82.2 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS=0V , VDS=-15V f=1MHz 971.5 235.1 pF 82.7 Note: 1. The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 2 ACE4435B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics -VDS (Volts) On-Region Characteristics On-Resistance vs. Drain Current and Gate Voltage -VGS (Volts) On-Resistance vs. Gate-Source Voltage -VGS (Volts) Transfer Characteristics Temperature (OC) On-Resistance vs. Junction Temperature -VDS (Volts) Body-Diode Characteristics VER 1.1 3 ACE4435B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Qg (nC) Gate-Charge Characteristics Time In avalanche, tA(us) Single Pulse Avalanche capability -VDS (Volts) Capacitance Characteristics -VDS (Volts) Maximum Forward Biased Safe Operating Area Pulse Width(s) Normalized Maximum Transient Thermal Impedance VER 1.1 4 ACE4435B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOP-8 DIM MILLMETERS MIN NOM MAX A 1.35 1.55 1.75 A(1) 0.10 0.18 0.25 B 0.38 0.45 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E 3.80 3.90 4.00 e 1.27 BSC H 5.8 6.00 6.20 L 0.50 0.72 0.93 a 0 4 8 h 0.25 0.38 0.50 0 0 0 Unit: mm VER 1.1 5 ACE4435B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6