AOSMD AO4822A

AO4822A
30V Dual N-channel MOSFET
General Description
Product Summary
The AO4822A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=10V)
VDS
30V
8A
RDS(ON) (at VGS=10V)
<19mΩ
RDS(ON) (at VGS = 4.5V)
< 26mΩ
ESD Protected
100% UIS Tested
100% Rg Tested
D
SOIC-8
Top View
Bottom View
D
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G
G
S
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±20
V
8
ID
TA=70°C
Maximum
30
6.5
A
Pulsed Drain Current C
IDM
48
Avalanche Current C
IAS, IAR
19
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
18
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 4 : November 2010
2
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
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-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4822A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
48
VGS=10V, ID=8A
TJ=125°C
VGS=4.5V, ID=6A
10
µA
1.8
2.4
V
15.5
19
21
25
18.5
26
mΩ
1
V
2.5
A
A
gFS
Forward Transconductance
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS(th)
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
S
600
740
888
pF
VGS=0V, VDS=15V, f=1MHz
77
110
145
pF
50
82
115
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
2
2.5
3
nC
2
3
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
5
ns
3.5
ns
19
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
3.5
8
10
ns
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: November 2010
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Page 2 of 6
AO4822A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
4V
VDS=5V
25
25
3.5V
20
ID(A)
ID (A)
20
15
3V
10
15
10
125°C
5
5
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
30
2
2.5
3
3.5
4
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.4
17
5
2
10
1.2
VGS=4.5V
ID=6A
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
40
1.0E+02
ID=8A
35
1.0E+01
30
1.0E+00
125°C
25
IS (A)
RDS(ON) (mΩ
Ω)
40
1.0E-01
125°C
1.0E-02
20
1.0E-03
15
25°C
25°C
1.0E-04
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: November 2010
1.0E-05
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4822A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8A
1000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
800
600
400
Coss
200
Crss
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
30
1000.0
100
IAR (A) Peak Avalanche Current
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
TA=25°C
TA=100°C
10
TA=125°C
TA=150°C
ID (Amps)
100.0
10µs
RDS(ON)
limited
10.0
100µs
1.0
0.1
1ms
10ms
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1
0.01
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
Rev 4: November 2010
0.001
0.1
10
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
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1000
Page 4 of 6
AO4822A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: November 2010
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Page 5 of 6
AO4822A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 4: November 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6