万和兴电子有限公司 www.whxpcb.com AOD2N60A/AOI2N60A 600V,2A N-Channel MOSFET General Description Product Summary The AOD2N60A & AOI2N60A have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View VDS @ Tj,max 700V ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 4.7Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View Top View D Bottom View D D G S G S S G G AOD2N60A S Gate-Source Voltage VGS TC=25°C Pulsed Drain Current TC=100°C C S AOI2N60A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain CurrentB G D D Maximum 600 Units V ±30 V 2 ID 1.4 A IDM 6 Avalanche Current C,I IAR 4.6 A Repetitive avalanche energy C,I EAR 10.6 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 97 5 57 mJ V/ns W 0.45 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G PD TJ, TSTG TL Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-CaseD,F RθJC Rev.1.0 September 2013 Typical 40 Maximum 50 Units °C/W 1.8 0.5 2.2 °C/W °C/W www.aosmd.com Page 1 of 6 AOD2N60A/AOI2N60A 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.7 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS ISM ±100 µA 4 4.5 nΑ V VGS=10V, ID=1A 3.9 4.7 Ω VDS=40V, ID=1A 2.8 IS=1A,VGS=0V 0.79 3.4 S 1 V Maximum Body-Diode Continuous Current 2 A Maximum Body-Diode Pulsed Current C 6 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 295 pF VGS=0V, VDS=25V, f=1MHz 30 pF 2.3 pF f=1MHz 3.2 Ω SWITCHING PARAMETERS Qg Total Gate Charge 6.5 VGS=10V, VDS=480V, ID=2A 11 nC Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 1.8 nC tD(on) Turn-On DelayTime 16 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=300V, ID=2A, RG=25Ω 28 ns 14 ns IF=2A,dI/dt=100A/µs,VDS=100V 268 Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 1.6 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.8A, VDD=150V, RG=10Ω, Starting TJ=25°C. I. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 September 2013 www.aosmd.com Page 2 of 6 AOD2N60A/AOI2N60A 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 -55°C VDS=40V 7V 4 3 6V ID(A) ID (A) 10V 1 VDS 2 125°C 5.5V 25°C 1 VGS=5V 0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 Normalized On-Resistance 10 8 RDS(ON) (Ω Ω) 10 VGS=10V 6 4 2 2.5 2 VGS=10V ID=1A 1.5 1 0.5 0 0 0 1 2 3 4 -100 5 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1E+01 1E+00 40 1.1 125°C 1 IS (A) BVDSS (Normalized) ID=30A 125° 1E-01 25°C 1E-02 0.9 1E-03 25° 0.8 1E-04 -100 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev.1.0 September 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Page 3 of 6 AOD2N60A/AOI2N60A 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=2A 12 9 6 100 Coss VDS 10 Crss 3 0 1 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0.1 1 10 10 800 10µs TJ(Max)=150°C TC=25°C RDS(ON) limited 600 1ms DC Power (W) 100µs 1 ID (Amps) 100 VDS (Volts) Figure 8: Capacitance Characteristics 400 10ms 0.1 200 TJ(Max)=150°C TC=25°C 0 0.01 1 10 100 0.0001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.2°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 September 2013 www.aosmd.com Page 4 of 6 AOD2N60A/AOI2N60A 万和兴电子有限公司 www.whxpcb.com 75 2.5 60 2.0 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 45 1.5 VDS 30 15 1.0 0.5 0 0.0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note B) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 400 TJ(Max)=150°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev.1.0 September 2013 www.aosmd.com Page 5 of 6 AOD2N60A/AOI2N60A 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 September 2013 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6