AOV11S60

AOV11S60
600V 8A α MOS
TM
Power Transistor
General Description
Product Summary
The AOV11S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
700V
IDM
45A
RDS(ON),max
0.5Ω
Qg,typ
11nC
Eoss @ 400V
2.7µJ
100% UIS Tested
100% Rg Tested
DFN8X8
Top View
Bottom View
D
D
G
G
S
Pin1:G
Pin2: Driver Source
S
S
AOV11S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
45
0.65
IDSM
TA=70°C
±30
7.0
IDM
TA=25°C
Units
V
8
ID
TC=100°C
Maximum
600
A
0.22
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
TA=25°C
EAS
120
mJ
156
W
1.25
8.3
W/ oC
PD
PDSM
Power Dissipation A TA=70°C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: September 2013
dv/dt
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
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Typ
12
40
0.6
W
5.3
100
20
-55 to 150
V/ns
300
°C
°C
Max
15
50
0.8
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOV11S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
2.8
3.5
4.1
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=3.8A, TJ=25°C
-
0.42
0.5
Ω
VGS=10V, ID=3.8A, TJ=150°C
-
1.17
1.4
Ω
IS=5.5A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
8
A
Maximum Body-Diode Pulsed CurrentC
-
-
45
A
-
545
-
pF
-
37.3
-
pF
-
30.8
-
pF
-
93.6
-
pF
VGS=0V, VDS=100V, f=1MHz
-
1.42
-
pF
VGS=0V, VDS=0V, f=1MHz
-
16.5
-
Ω
-
11
-
nC
-
2.8
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=5.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
3.8
-
nC
tD(on)
Turn-On DelayTime
-
20
-
ns
tr
Turn-On Rise Time
-
20
-
ns
tD(off)
Turn-Off DelayTime
-
59
-
ns
tf
trr
Turn-Off Fall Time
-
20
-
ns
VGS=10V, VDS=400V, ID=5.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=5.5A,dI/dt=100A/µs,VDS=400V
-
250
-
ns
Irm
IF=5.5A,dI/dt=100A/µs,VDS=400V
-
21
-
Qrr
Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
-
3.3
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
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Page 2 of 7
AOV11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
20
10V
10V
16
12
7V
7V
ID (A)
8
ID (A)
6V
12
6V
8
5.5V
5.5V
4
VGS=4.5V
4
5V
5V
VGS=4.5V
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
100
1.2
-55°C
VDS=20V
0.9
10
RDS(ON) (Ω )
ID(A)
125°C
1
25°C
VGS=10V
0.6
0.3
0.1
0.0
0.01
2
4
6
8
0
10
10
15
20
25
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=3.8A
BVDSS (Normalized)
Normalized On-Resistance
5
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev.1.0: September 2013
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0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 7
AOV11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=480V
ID=5.5A
25°C
1.0E-01
9
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
8
12
16
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
6
5
Ciss
1000
Eoss(uJ)
Capacitance (pF)
4
100
Eoss
4
3
Coss
2
10
1
Crss
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
0
600
200
300
400
VDS (Volts)
Figure 10: Coss stored Energy
500
600
120
100
RDS(ON)
limited
10µs
100µs
1
1ms
DC
90
EAS(mJ)
10
ID (Amps)
100
60
10ms
0.1
30
TJ(Max)=150°C
TC=25°C
0.01
0
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11S60 (Note F)
Rev.1.0: September 2013
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25
50
75
100
125
TCASE (°C)
Figure 12: Avalanche energy
150
175
Page 4 of 7
AOV11S60
10
2000
8
1600
Power (W)
Current rating ID(A)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
4
TJ(Max)=150°C
TC=25°C
1200
800
400
2
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
0
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
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Page 5 of 7
AOV11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TJ(Max)=150°C
TA=25°C
Power (W)
80
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JC Normalized Transient
Thermal Resistance
100
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
0.001
0.0001
0.00001
0.000001
Ton
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
10000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0: September 2013
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Page 6 of 7
AOV11S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0: September 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 7 of 7