AOD4124 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V 54A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 21mΩ RDS(ON) (at VGS = 7V) < 25mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG TC=25°C C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: May 2010 IAS, IAR 35 A EAS, EAR 60 mJ 150 Steady-State Steady-State W 75 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 6 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 7.5 PD TC=100°C A 130 IDSM TA=70°C V 38 IDM TA=25°C Continuous Drain Current Units V 54 ID TC=100°C Pulsed Drain Current Maximum 100 ±25 -55 to 175 Typ 12 33 0.8 °C Max 15 40 1 Units °C/W °C/W °C/W Page 1 of 7 AOD4124 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 50 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.8 VGS=10V, VDS=5V 130 RDS(ON) Static Drain-Source On-Resistance 100 VGS=10V, ID=20A TJ=125°C VGS=7V, ID=20A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 3.4 4 µA nA V A 16.7 21 31.4 38 19.8 25 mΩ 1 V 54 A 33 0.66 mΩ S 1600 2006 2420 pF 110 164 230 pF 30 58 90 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.7 1.1 Ω 24 31 38 nC VGS=10V, VDS=50V, ID=20A 7.5 9.4 11.5 nC 6.5 11 16 nC VGS=0V, VDS=50V, f=1MHz Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr Units V TJ=55°C gFS Max 10 IGSS IS Typ 14 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω ns 9 ns 21 ns 6 ns 16 23 30 60 91 120 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2010 www.aosmd.com Page 2 of 7 AOD4124 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V VDS=5V 7V 60 6V 40 20 VGS=5V ID(A) ID (A) 60 40 125°C 20 5.5V 0 25°C 0 0 1 2 3 4 5 0 2 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 10 Normalized On-Resistance 2.6 25 RDS(ON) (mΩ) 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 VGS=7V 20 15 VGS=10V 10 5 0 2.4 VGS=10V ID=20A 2.2 2 17 5 2 10 VGS=7V 1.8 1.6 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 40 1.0E+02 ID=20A 1.0E+01 35 125°C 40 1.0E+00 30 125°C IS (A) RDS(ON) (mΩ) 4 25 20 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 15 1.0E-04 10 1.0E-05 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: May 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOD4124 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=50V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2000 1500 1000 2 500 Crss 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 35 10µs 10µs RDS(ON) limited 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 ZθJC Normalized Transient Thermal Resistance 1 100 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 1200 800 400 1 10 VDS (Volts) 100 1000 0 1E-05 0.0001 0.001 0.01 0.1 0 1 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 1600 Power (W) 100.0 10.0 20 2000 1000.0 ID (Amps) Coss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1°C/W 0.1 PD 0.01 0.001 0.000001 Ton Single Pulse 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: May 2010 www.aosmd.com Page 4 of 7 AOD4124 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 175 TA=25°C 150 TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 125 100 75 50 25 1 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 175 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 17 5 2 10 100 10 10 0 0 25 50 75 100 125 150 1 0.0001 175 ZθJA Normalized Transient Thermal Resistance 10 1 0.01 1 1000 10000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=40°C/W 40 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 10000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: May 2010 www.aosmd.com Page 5 of 7 AOD4124 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 di/dt=800A/µs 140 40 125ºC 6 di/dt=800A/µs 25 120 5 20 60 125ºC 15 25ºC 10 Irm 25ºC 5 1 S 0 0 0 5 10 15 20 25 150 0 40 10 30 Irm 0 200 400 600 2 25 25ºC 20 trr 125º 1.5 1 S 10 800 0 1000 0.5 25ºC 0 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: May 2010 2.5 125ºC 5 25ºC 0 30 3 15 125º 25 Is=20A trr (ns) 20 20 30 Irm (A) 25ºC 0 15 40 30 Qrr 10 35 120 60 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 125ºC 90 25ºC 0 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 2 125ºC 10 20 3 www.aosmd.com S 80 4 trr S 20 25ºC trr (ns) Qrr 100 40 Qrr (nC) 125ºC 30 Irm (A) Qrr (nC) 30 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOD4124 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: May 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7