A-POWER AP18N20AGS-HF

AP18N20AGS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
200V
RDS(ON)
170mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
18A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Rating
Units
VDS
Symbol
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
18
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
9.5
A
60
A
89
W
Parameter
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
[email protected]=25℃
Total Power Dissipation
3.13
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
Value
Units
1.4
℃/W
40
℃/W
1
201011091
AP18N20AGS-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
Max.
Units
200
-
-
V
VGS=10V, ID=8A
-
-
170
mΩ
VGS=4.5V, ID=5A
-
-
180
mΩ
V
VGS=0V, ID=250uA
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
gfs
Forward Transconductance
VDS=10V, ID=8A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
2
Qg
Total Gate Charge
ID=8A
-
18
29
nC
Qgs
Gate-Source Charge
VDS=160V
-
4.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8.5
-
nC
2
td(on)
Turn-on Delay Time
VDD=100V
-
8
-
ns
tr
Rise Time
ID=8A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
72
-
ns
tf
Fall Time
VGS=10V
-
37
-
ns
Ciss
Input Capacitance
VGS=0V
-
1600
2560
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
Max.
Units
IS=10A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
160
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1260
-
nC
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18N20AGS-HF
30
40
o
10V
8.0V
7.0V
6.0V
V G = 5.0V
30
o
10V
8.0V
7.0V
6.0V
V G =5.0V
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C = 25 C
20
20
10
10
0
0
0
4
8
12
0
16
4
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
2.8
132
I D =8A
T C =25 o C
I D =8A
V G =10V
2.4
Normalized RDS(ON)
130
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
128
126
2.0
1.6
124
1.2
122
0.8
0.4
120
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
Normalized VGS(th) (V)
1.6
IS(A)
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18N20AGS-HF
f=1.0MHz
10
2400
2000
8
C iss
1600
C (pF)
VGS , Gate to Source Voltage (V)
I D = 8A
V DS =160V
6
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
1
40
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
SINGLE PULSE
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4