A-POWER AP07S60H-HF

AP07S60H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
BVDSS
600V
RDS(ON)
0.65Ω
ID
G
7A
S
Description
AP07S60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Rating
Units
VDS
Drain-Source Voltage
Parameter
600
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
7
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
4.3
A
16
A
83.3
W
2
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
Value
Units
1.5
℃/W
62.5
℃/W
1
201302201
AP07S60H-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
600
-
-
V
VGS=10V, ID=3.5A
-
-
0.65
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3.5A
-
6.6
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3.5A
-
26
41.6
nC
Qgs
Gate-Source Charge
VDS=480V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
12.5
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
9
-
ns
tr
Rise Time
ID=3.5A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
32
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
680
1088
pF
Coss
Output Capacitance
VDS=25V
-
430
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.5
9
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=3.5A, VGS=0V
-
0.8
-
V
trr
Reverse Recovery Time
IS=3.5A, VGS=0V
-
160
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.25
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP07S60H-HF
16
10
o
12
T C =150 C
8
ID , Drain Current (A)
T C =25 C
ID , Drain Current (A)
o
10V
8.0V
7.0V
6.0V
V G =5.0V
8
0.37Ω
6
10V
8.0V
7.0V
6.0V
V G =5.0V
4
4
2
0
0
0
4
8
12
16
20
24
0
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
24
32
Fig 2. Typical Output Characteristics
740
4
I D =3.5A
V G =10V
I D =3.5A
o
T C =25 C
Normalized RDS(ON)
700
RDS(ON) (mΩ)
16
V DS , Drain-to-Source Voltage (V)
660
620
3
2
580
1
540
0
500
2
4
6
8
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I D =250uA
1.5
IS (A)
Normalized VGS(th)
6
4
T j = 150 o C
T j = 25 o C
1
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
-25
0
25
50
75
100
125
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP07S60H-HF
f=1.0MHz
12
2400
I D =3.5A
V DS =480V
2000
8
0.37Ω
1600
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
1200
800
C iss
2
400
0
C oss
0
0
8
16
24
32
1
5
9
13
17
21
25
C rss
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
ID (A)
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
1s
DC
o
T c =25 C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
10
VG
ID , Drain Current (A)
8
QG
10V
6
QGS
QGD
4
2
Charge
Q
0
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4