AP99T03GS-HF - Advanced Power Electronics Corp

AP99T03GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
30V
RDS(ON)
2.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
200A
S
Description
AP99T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
G D
S
TO-263(S)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current (Chip)
[email protected]=25℃
[email protected]=100℃
200
A
3
120
A
3
120
A
800
A
156
W
3.12
W
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
4
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Data and specifications subject to change without notice
Value
Units
0.8
℃/W
40
℃/W
1
201306071
AP99T03GS-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
2.5
mΩ
VGS=4.5V, ID=30A
-
-
4
mΩ
0.8
-
2.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
110
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
80
128
nC
Qgs
Gate-Source Charge
VDS=24V
-
11.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
55
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
16
-
ns
tr
Rise Time
ID=30A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
55
-
ns
tf
Fall Time
VGS=10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
5000 8000
pF
Coss
Output Capacitance
VDS=25V
-
1060
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
850
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=40A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
55
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP99T03GS-HF
320
200
ID , Drain Current (A)
240
160
10V
7.0V
6.0V
5.0V
V G = 4.0V
T C = 150 o C
160
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T C = 25 C
120
80
80
40
0
0
0
2
4
6
0
8
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
3.2
2.0
I D =30A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
2.8
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2.4
2
1.6
1.2
0.8
1.6
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
I D =1mA
30
1.2
Normalized VGS(th)
T j =25 o C
IS(A)
T j =150 o C
20
10
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP99T03GS-HF
f=1.0MHz
10
8000
V DS = 15 V
V DS = 18 V
V DS = 24 V
8
6000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
6
4000
4
2000
2
C oss
C rss
0
0
0
40
80
120
1
160
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Operation in this area
limited by RDS(ON)
100us
ID (A)
100
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4