AP30T10GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
55mΩ
ID
G
16A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS@10V
16
A
ID@TC=100℃
Continuous Drain Current, V GS@10V
10
A
60
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201112132
AP30T10GI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=12A
-
-
55
mΩ
VGS=5V, ID=8A
-
-
85
mΩ
0.9
-
2.5
V
-
14
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=12A
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=12A
-
13.5
21.6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=50V
-
6.5
-
ns
tr
Rise Time
ID=12A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
840
1340
pF
Coss
Output Capacitance
VDS=25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
IS=12A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=12A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30T10GI-HF
50
40
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
40
30
V GS =4.0V
20
10V
7.0V
6.0V
5.0V
o
T C = 150 C
ID , Drain Current (A)
T C = 25 o C
30
V GS =4.0V
20
10
10
0
0
0
2
4
6
8
0
10
4
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
70
3.0
I D =8A
T C =25 o C
I D =12A
V G =10V
2.6
Normalized RDS(ON)
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
60
50
2.2
1.8
1.4
1.0
0.6
0.2
40
2
4
6
8
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
12
T j =150 o C
Normalized VGS(th) (V)
IS(A)
16
T j =25 o C
8
1.2
0.8
0.4
4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP30T10GI-HF
10
f=1.0MHz
1200
1000
8
V DS =50V
V DS =60V
V DS =80V
6
C iss
800
C (pF)
VGS , Gate to Source Voltage (V)
I D =12A
600
4
400
2
200
C oxx
C rss
0
0
0
4
8
12
16
20
1
24
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (Rthjc)
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
1ms
10ms
100ms
1s
DC
1
o
T c =25 C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4