AP9963GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
40V
RDS(ON)
4mΩ
ID
G
70A
S
Description
The Advanced
Advanced
Power
Power
MOSFETs
MOSFETs
fromfrom
APEC
APEC
provide
provide
the the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@Tc=25℃
Continuous Drain Current, V GS @ 10V
70
A
ID@Tc=100℃
Continuous Drain Current, V GS @ 10V
50
A
280
A
37.5
W
1
IDM
Pulsed Drain Current
PD@Tc=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
200910011
AP9963GI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6.5
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=30A
-
80
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=30A
-
25
40
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
11
-
ns
tr
Rise Time
ID=30A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=2.4Ω,VGS=10V
-
30
-
ns
tf
Fall Time
RD=0.66Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
2800 4500
pF
Coss
Output Capacitance
VDS=25V
-
590
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
-
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
41
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
47
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9963GI-HF
300
160
o
T C =25 C
200
ID , Drain Current (A)
ID , Drain Current (A)
250
10V
7.0V
6.0V
5.0V
T C =175 o C
10V
7.0V
6.0V
5.0V
V G = 4. 0V
150
100
120
V G =4.0V
80
40
50
0
0
0.0
1.0
2.0
3.0
4.0
0.0
1.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
5.6
I D =40A
V G =10V
I D =30A
T C =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ)
1.8
4.8
4
1.4
1.0
3.2
0.6
0.2
2.4
2
4
6
8
-50
10
0
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
30
1.2
Normalized VGS(th) (V)
IS(A)
100
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
o
T j =175 C
50
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9963GI-HF
f=1.0MHz
10
4000
VGS , Gate to Source Voltage (V)
I D =30A
8
3000
V DS =20V
V DS =24V
V DS =32V
C iss
C (pF)
6
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
ID (A)
100
Operation in this area
limited by RDS(ON)
100us
1ms
10
10ms
100ms
1
DC
T C =25 o C
Single Pulse
0
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4