A-POWER AP75T10GP-HF

AP75T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
100V
RDS(ON)
15mΩ
ID
G
▼ RoHS Compliant
BVDSS
65A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
65
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
41
A
260
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
138
W
Linear Derating Factor
1.11
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.9
℃/W
62
℃/W
1
200807113
AP75T10GP-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
100
-
-
V
-
0.09
-
V/℃
VGS=10V, ID=30A
-
-
15
mΩ
VGS=4.5V, ID=16A
-
-
21
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=1mA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
52
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C)
VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=30A
-
69
110.4
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
39
-
nC
VDS=50V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
220
-
ns
tf
Fall Time
RD=1.6Ω
-
250
-
ns
Ciss
Input Capacitance
VGS=0V
-
5690 9100
pF
Coss
Output Capacitance
VDS=25V
-
540
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
310
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
IS=30A, VGS=0V
-
51
-
ns
dI/dt=100A/µs
-
74
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75T10GP-HF
250
120
100
ID , Drain Current (A)
ID , Drain Current (A)
200
10V
6.0V
5.0V
4.5V
V G =3.0V
T C = 150 o C
10V
6.0 V
5.0V
4.5V
o
T C = 25 C
150
V G =3.0V
100
80
60
40
50
20
0
0
0
2
4
6
8
0
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
9
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
17
2.0
I D =16A
16
I D =30A
V G =10V
1.8
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
1
15
14
1.6
1.4
1.2
1.0
13
0.8
12
0.6
0.4
11
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
Normalized VGS(th) (V)
45
IS(A)
30
T j =150 o C
T j =25 o C
15
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP75T10GP-HF
f=1.0MHz
12
10000
I D = 30 A
C iss
V DS = 50 V
V DS = 64 V
V DS = 80 V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
1000
C oss
4
C rss
2
0
100
0
20
40
60
80
100
120
140
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.60
3.10
3.60
L4
14.70
15.50
16.00
L1
L
c
b
L5
6.30
6.50
6.70
φ
3.50
3.70
3.90
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
75T10GP
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5