A-POWER AP6679GR

AP6679GR
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
BVDSS
-30V
RDS(ON)
9mΩ
ID
-75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
-30
V
+25
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-75
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-51
A
-300
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.71
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
2008012303
AP6679GR
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A
-
-
9
mΩ
VGS=-4.5V, ID=-24A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-16A
-
34
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +25, VDS=0V
-
-
+100
nA
ID=-16A
-
42
67
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
25
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-16A
-
35
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
58
-
ns
tf
Fall Time
RD=0.94Ω
-
78
-
ns
Ciss
Input Capacitance
VGS=0V
-
2870 4590
pF
Coss
Output Capacitance
VDS=-25V
-
960
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
740
-
pF
Min.
Typ.
IS=-24A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-16A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
43
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is -75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GR
150
280
-ID , Drain Current (A)
-ID , Drain Current (A)
200
-6.0V
160
-4.5V
120
-10V
-8.0V
T C =150 o C
-10V
-8.0V
T C =25 o C
240
80
-6.0V
100
-4.5V
50
V G = -3.0V
V G =-3.0V
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0.0
4
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
15
I D = -30A
V G = -10V
I D = -24A
T C = 25 ℃
1.4
Normalized RDS(ON)
13
RDS(ON) (mΩ )
0.5
-V DS , Drain-to-Source Voltage (V)
11
1.2
1.0
9
0.8
0.6
7
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
1.8
60
1.6
-VGS(th) (V)
45
-IS(A)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
75
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
30
15
1.4
1.2
1
0
0.8
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GR
7
f=1.0MHz
10000
C iss
5
I D = -16A
V DS = -24V
4
C (pF)
-VGS , Gate to Source Voltage (V)
6
1000
C oss
C rss
3
2
1
0
100
0
10
20
30
40
50
60
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100us
-ID (A)
100
1ms
10
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
75
V DS = -5V
VG
T j =25 o C
-ID , Drain Current (A)
60
T j =150 o C
QG
-4.5V
45
QGS
QGD
30
15
Charge
Q
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-262
E
E1
A
E2
c1
D3
D1
L1
Millimeters
SYMBOLS
MIN
NOM
MAX
A
4.24
4.44
4.64
A1
-----
-----
2.70
b
0.66
0.76
0.86
b1
1.07
1.27
1.47
b3
0.76
0.86
1.06
c
0.30
0.40
0.50
c1
1.15
1.30
1.45
D
8.30
8.60
8.90
E
9.90
10.20
10.50
e
2.04
2.54
3.04
L
10.50
11.00
11.50
L1
9.50
10.00
10.30
L3
----
1.30
----
L4
10.80
11.30
11.35
D2
D
L4
E3
b1
L3
A1
b3
b
L
c
E1
7.8 (Ref.)
E2
6.6 (Ref.)
E3
2.2 (Ref.)
D1
7.8 (Ref.)
1.All Dimensions Are in Millimeters.
D2
7.0 (Ref.)
2.Dimension Does Not Include Mold Protrusions.
D3
1.7 (Ref.)
e
Part Marking Information & Packing : TO-262
Part Number
6679GR
Package Code
Meet Rohs requirement
for low voltage MOSFET only
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5