DINTEK DTC2058_13

DTC2058
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
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• Halogen-free
ID (A)a
RDS(on) (Ω)
0.033 at VGS = 4.5 V
Qg (Typ.)
• TrenchFET® Power MOSFET
RoHS
6.8
0.045 at VGS = 2.5 V
10 nC
6.8
COMPLIANT
APPLICATIONS
• Load Switches for Portable Devices
D
D
G
G
S
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)e, f
ID
IDM
IS
PD
TJ, Tstg
Limit
20
± 12
6.8a
6a
6.8 a, b , c
6 a, b, c
30
5.2
2.1b, c
6.3
4
2.5b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
40
50
Maximum Junction-to-Ambienta, c, d
°C/W
RthJF
15
20
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
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DTC2058
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS /TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
25
mV/°C
- 4.0
0.6
1.5
V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
µA
A
30
VGS = 4.5 V, ID = 8.3 A
0.026
0.033
VGS = 2.5 V, ID = 4.5 A
0.030
0.045
VDS = 10 V, ID = 8.3 A
45
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
1200
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 8.3 A
VDS = 10 V, VGS = 4.5 V, ID = 8.3 A
td(off)
22
33
10
15
2.5
f = 1 MHz
VDD = 10 V, RL = 1.5 Ω
ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω
Ω
2.4
15
25
10
15
35
55
tf
12
20
td(on)
10
15
tr
td(off)
nC
1.7
td(on)
tr
pF
220
100
VDD = 10 V, RL = 1.5 Ω
ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω
tf
12
20
25
40
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
5.2
30
IS = 6.7 A, VGS = 0 V
IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
20
40
ns
10
20
nC
10
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTC2058
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
30
VGS = 5 thru 2.5 V
TC = - 55 °C
8
I D - Drain Current (A)
I D - Drain Current (A)
24
18
VGS = 2 V
12
6
TC = 125 °C
4
2
6
TC = 25 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
VGS = 1.5 V
2.5
2.0
0
0.0
3.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
0.026
0.024
Ciss
0.022
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1200
0.020
VGS = 2.5 V
0.018
0.016
VGS = 4.5 V
0.014
900
600
Coss
300
0.012
Crss
0
0.010
0
6
12
18
24
0
30
5
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
10
1.6
ID = 6.3 A
ID = 6.3 A
8
VGS = 4.5 V, 2.5 V
VDS = 10 V
6
VDS = 16 V
4
2
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
1.0
0.8
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTC2058
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.050
100
ID = 6.3 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.040
TJ = 25 °C
10
1
0.0
0.030
TJ = 125 °C
0.020
TJ = 25 °C
0.010
0.000
0.2
0.4
0.6
1.0
0.8
1.2
0
1
VSD - Source-to-Drain Voltage (V)
5
50
40
ID = 250 µA
Power (W)
1.2
V GS(th) (V)
4
On-Resistance vs. Gate-to-Source Voltage
1.4
1.0
0.8
30
20
10
0.6
- 25
0
25
75
50
100
125
0
0.001
150
0.01
1
10
Single Pulse Power
Threshold Voltage
100
Limited by RDS(on)*
100 µs
10
ID - Drain Current (A)
0.1
Time (s)
TJ - Temperature (°C)
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
100 ms
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
3
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
- 50
2
100
600
DTC2058
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18
8
15
Power (W)
ID - Drain Current (A)
6
12
9
Package Limited
4
6
2
3
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTC2058
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
ffecti
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
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Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.62
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
1
Inches
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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