DINTEK DTU06N03

D56/
www.daysemi.jp
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, g
0.0041 at VGS = 10 V
60g
0.0059 at VGS = 4.5 V
60g
VDS (V)
30
Qg (Typ.)
34 nC
• Halogen-free
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
RoHS
COMPLIANT
APPLICATIONS
D
TO-252
• Low-Side Switch for DC/DC Converters
- Servers
- POL
- VRM
• OR-ing
G
G
D
S
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Unit
V
60g
60g
36b, c
29b, c
80
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
A
60g
4.9b, c
50
125
83
53
mJ
5.4b, c
3.4b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
18
1.0
Maximum
23
1.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
28
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 6.6
1.2
30
µA
A
VGS = 10 V, ID = 20 A
0.0031
0.0041
VGS = 4.5 V, ID = 20 A
0.0043
0.0059
VDS = 10 V, ID = 20 A
100
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
4590
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
74
110
34
51
VDS = 15 V, VGS = 4.5 V, ID = 20 A
12
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
f = 1 MHz
1.6
19
35
5
10
85
5
10
td(on)
45
85
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Fall Time
0.8
45
td(off)
Turn-Off Delay Time
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.2
tf
tr
Rise Time
nC
10
td(on)
Turn-On Delay Time
pF
810
320
18
45
60
110
30
60
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
60
80
IS = 4 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.72
1.1
V
33
50
ns
25
40
nC
16
17
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
5
VGS = 10 thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
64
48
32
VGS = 3 V
16
3
2
TC = 125 °C
1
TC = 25 °C
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
6000
0.0027
Ciss
4800
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2
VDS - Drain-to-Source Voltage (V)
0.0030
0.0024
0.0041
VGS = 10 V
3600
2400
0.003
1200
0.0015
Coss
Crss
0
0
14
28
42
56
70
6
0
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.7
ID = 10 A
ID = 20 A
VDS = 15 V
8
VGS = 10 V
VDS = 10 V
VDS = 20 V
6
4
2
(Normalized)
1.5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1
1.3
VGS = 4.5 V
1.1
0.9
0
0
16
32
48
Qg - Total Gate Charge (nC)
Gate Charge
64
80
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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100
0.010
10
0.008
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.006
0.004
TJ = 125 °C
0.002
TJ = 25 °C
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
3
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2
160
- 0.1
ID = 5 mA
- 0.4
ID = 250 µA
- 0.7
10
120
80
40
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
DC
BVDSS
Limited
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
4
Source-Drain Diode Forward Voltage
0.5
- 1.0
- 50
1
VSD - Source-to-Drain Voltage (V)
Power (W)
V GS(th) Variance (V)
0.001
0.0
100
10
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
170
I D - Drain Current (A)
136
102
Package Limited
68
34
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
100
2.5
80
2.0
Power (W)
Power (W)
Current Derating*
60
40
20
1.5
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
1
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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