DTS3400A www.din-tek.jp N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a RDS(on) (Ω) 0.024 at VGS = 10 V 6 0.033 at VGS = 4.5 V 4.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 2.1 nC APPLICATIONS • DC/DC Converter D TO-236 (SOT-23) G 1 3 S G D 2 S Top View N-Channel MOSFET DTS3402 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current Limit 30 ± 20 6.0a 4.3 6.0 4.7 15 1.4 ID IDM IS Unit V A 0.9b, c 1.7 1.1 PD 1.1b, c 0.7b, c - 55 to 150 260 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter t≤5s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W. Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit °C/W 1 DTS3400A www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 31 mV/°C -5 1.2 2.2 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 10 µA A VGS = 10 V, ID = 3.2 A 0.019 0.024 VGS = 4.5 V, ID = 2.8 A 0.021 0.033 VDS = 15 V, ID = 4.8 A 11 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 235 VDS = 15 V, VGS = 0 V, f = 1 MHz 45 VDS = 15 V, VGS = 10 V, ID = 3.4 A 4.5 6.7 2.1 3.2 17 0.85 VDS = 15 V, VGS = 4.5 V, ID = 3.4 A VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 0.8 4.4 8.8 12 20 50 75 12 20 tf 22 35 td(on) 5 10 12 20 10 15 5 10 td(off) tr td(off) nC 0.65 f = 1 MHz td(on) tr pF VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.4 15 IS = 2.7 A, VGS = 0 V IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 10 20 ns 5 10 nC 6 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTS3400A TYPICAL CHARACTERISTICS www.din-tek.jp 25 °C, unless otherwise noted 5 15 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 3 V 3 TC = - 55 °C 2 TC = 25 °C 1 3 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.5 3.0 3.5 300 Ciss 250 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 Transfer Characteristics 0.10 VGS = 4.5 V 0.06 VGS = 10 V 0.04 200 150 100 Coss 0.02 50 Crss 0 0.00 0 3 6 9 12 0 15 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.6 1.5 ID = 3.4 A ID = 3.2 A VGS = 10 V 8 1.4 VDS = 7.5 V 6 VDS = 24 V 4 VDS = 15 V 2 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.0 VGS - Gate-to-Source Voltage (V) 1.2 1.1 1.0 0.9 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge 4 5 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTS3400A www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.14 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.2 A 10 TJ = 150 °C TJ = 25 °C 1 0.12 0.10 TJ = 125 °C 0.08 0.06 TJ = 25 °C 0.04 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 10 25 2.2 20 Power (W) VGS(th) (V) 2.0 ID = 250 µA 1.8 15 10 1.6 5 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Threshold Voltage Limited by RDS(on)* I D - Drain Current (A) 10 Single Pulse Power 100 10 100 µs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 1 Time (s) 100 1000 DTS3400A TYPICAL CHARACTERISTICS www.din-tek.jp 25 °C, unless otherwise noted 2.0 5 1.5 Package Limited 3 Power (W I D - Drain Current (A) 4 2 1.0 0.5 1 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTS3400A www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot . 6 1 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.95 BSC 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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