DINTEK DTM4925

DTM4925
www.din-tek.jp
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d, e
0.029 at VGS = - 10 V
-8
0.041 at VGS = - 4.5 V
-8
VDS (V)
- 30
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % UIS Tested
Qg (Typ.)
15 nC
RoHS
COMPLIANT
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
S1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
Top View
G2
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 2.0a, b
- 20
20
5.0
3.2
2.5a, b
1.6a, b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
- 8.0e
- 8.0e
- 7.3a, b
- 5.9a, b
- 32e
- 4.1
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
- 30
± 20
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
e. Limited by package.
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DTM4925
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
mV/°C
4.5
- 1.0
- 3.0
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 7.3 A
- 30
0.029
VGS = - 4.5 V, ID = - 6.2 A
0.033
0.041
VDS = - 10 V, ID = - 9.1 A
23
1350
VDS = - 15 V, VGS = 0 V, f = 1 MHz
215
pF
185
VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A
32
50
15
25
VDS = - 15 V, VGS = - 4.5 V, ID = - 9.1 A
4
f = 1 MHz
5.8
10
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
Ω
15
15
70
tf
12
25
td(on)
42
70
tr
nC
7.5
8
td(off)
Ω
S
45
td(off)
µA
A
0.024
td(on)
tr
V
- 31
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
35
60
40
70
16
30
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 4.1
- 32
IS = - 2 A, VGS = 0 V
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
34
60
ns
22
40
nC
11
23
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4925
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
40
0.8
TC = - 55 °C
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 thru 5 V
30
VGS = 4 V
20
0.6
0.4
TC = 25 °C
10
0.2
VGS = 3 V
TC = 125 °C
0
0.0
0.5
1.0
1.5
0.0
0.0
2.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
2400
0.06
1800
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
VGS = 4.5 V
0.04
VGS = 10 V
Ciss
1200
600
0.02
Coss
Crss
0
0.00
0
10
20
30
0
40
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.8
ID = 9.1 A
ID = 7.3 A
8
VDS = 15 V
6
VDS = 7.5 V
VDS = 22.5 V
4
1.5
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
1.2
VGS = 10 V
0.9
2
VGS = 4.5 V
0
0
9
18
27
Qg - Total Gate Charge (nC)
Gate Charge
36
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTM4925
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
10
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 7.3 A
TJ = 150 °C
TJ = 25 °C
1
0.1
TJ = - 50 °C
0.01
0.06
TJ = 125 °C
0.04
0.02
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
10
100
80
0.4
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
2
ID = 1 mA
60
40
0.0
20
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
100
Limited by RDS(on)*
10
I D - Drain Current (A)
1
10
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100 µs
1 ms
1
10 ms
100 ms
0.1
10 s
1 s, DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
4
0.1
Time (s)
DTM4925
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
I D - Drain Current (A)
12
9
Package Limited
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
6.0
2.0
4.8
1.6
3.6
1.2
Power (W)
Power (W)
Current Derating*
2.4
0.8
0.4
1.2
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTM4925
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDM Z thJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Legal Disclaimer Notice
Disclaimer
www.din-tek.jp
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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