DINTEK DTM4425_13

DTM4425
www.din-tek.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
- 30
0.0088 at VGS = 10 V
- 15
0.0105 at VGS = 4.5 V
- 13.7
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Qg (Typ.)
27 nC
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
- 12.7
ID
TA = 25 °C
- 13b, c
- 10.4b, c
Pulsed Drain Current
IDM
TC = 25 °C
- 4.7
IS
TA = 25 °C
- 2.1b, c
5.7
TC = 70 °C
3.6
PD
TA = 25 °C
W
2.5b, c
1.6b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
- 50
TC = 25 °C
Maximum Power Dissipation
V
- 15
TC = 70 °C
TA = 70 °C
Continous Source-Drain Diode Current
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t ≤ 10 s
RthJA
35
50
Steady State
RthJF
18
22
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
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DTM4425
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 20
mV/°C
4.9
- 1.2
- 2.5
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
VDS ≤ - 5 V, VGS = - 10 V
- 30
µA
A
VGS = - 10 V, ID = - 13 A
0.0081
0.0088
VGS = - 4.5 V, ID = - 10 A
0.0097
0.0105
VDS = - 15 V, ID = - 13 A
40
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
2610
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 13 A
td(off)
53
80
27
41
8
VDS = - 15 V, VGS = - 4.5 V, ID = - 13 A
f = 1 MHz
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
0.4
2.1
4.2
52
78
41
62
36
54
tf
15
25
td(on)
12
20
tr
td(off)
nC
13
td(on)
tr
pF
460
395
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
tf
9
15
42
63
9
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 4.7
- 50
IS = - 10 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
20
30
ns
10
20
nC
10
9
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4425
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
VGS = 10 V thru 4 V
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
1.5
1.0
TC = 25 °C
0.5
10
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0.0
0.0
0.5
1.0
1.5
2.0
0
1
VDS - Drain-to-Source Voltage (V)
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
4000
0.015
VGS = 4.5 V
0.010
VGS = 10 V
Ciss
3000
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
2000
0.005
1000
Coss
Crss
0.000
0
0
10
20
30
40
50
5
0
10
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.8
10
ID = 13 A
ID = 13 A
8
6
VDS = 15 V
VDS = 24 V
4
1.5
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
15
VGS = 10 V
1.2
VGS = 4.5 V
0.9
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
50
60
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTM4425
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
4
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
10
100
80
Power (W)
VGS(th) (V)
1.9
1.6
ID = 250 µA
60
40
1.3
20
1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µA
10
I D - Drain Current (A)
1
Time (s)
TJ - Temperature (°C)
Threshold Voltage
1 ms
10 ms
1
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
0.1
10
DTM4425
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
24
I D - Drain Current (A)
20
16
12
8
4
0
25
0
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
1.8
8
1.5
6
Power (W)
Power (W)
1.2
4
0.9
0.6
2
0.3
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTM4425
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Legal Disclaimer Notice
Disclaimer
www.din-tek.jp
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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