VRF141G 28V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF141G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES • Improved Ruggedness V(BR)DSS = 80V • 5:1 Load VSWR Capability at Specified Operating Conditions • 300W with 14dB Typical Gain @ 175MHz, 28V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • High Voltage Replacement for MRF141G • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF141G Unit 80 V Continuous Drain Current @ TC = 25°C 40 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 500 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Min Typ 80 90 .9 Max 1.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 60V, VGS = 0V) IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.35 °C/W 1.0 1.0 mA μA mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4953 Rev A 5-2009 Thermal Characteristics Dynamic Characteristics Symbol VRF141G Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 400 Coss Output Capacitance VDS = 28V 375 Crss Reverse Transfer Capacitance f = 1MHz 50 Max Unit pF Functional Characteristics Symbol Min Typ GPS f = 175MHz,- VDD = 28V, IDQ = 500mA, Pout = 300W Parameter 12 14 Max dB ηD f = 175MHz, VDD = 28V, IDQ = 500mA, Pout = 300W 45 55 % ψ f = 175MHz, VDD = 28V, IDQ = 500mA, Pout = 300W 5:1VSWR - All Phase Angles No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 25 60 50 20 10V 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 250μs PULSE TEST<0.5 % DUTY CYCLE 14V 9V 30 8V 7V 20 6V 10 5V TJ= -55°C TJ= 25°C 15 TJ= 125°C 10 5 VGS = 4V 0 0 V 5 10 15 20 0 25 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics ID, DRAIN CURRENT (A) C, CAPACITANCE (F) 4 6 8 10 12 100 1,000 Ciss Coss 100 Crss 050-4953 Rev A 5-2009 2 VGS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics DS(ON) 10,000 10 0 IDMax 10 PD Max Rds(on) TJ = 125°C TC = 75°C 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Unit Typical Performance Curves VRF141G 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.15 0.3 0.10 t2 t1 = Pulse Duration t 0.1 0.05 0 t1 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration R1 L2 C4 Bias 0-6V C10 C5 C11 C12 + 28V - R2 Input C1 DUT T2 Output L1 C13 T1 High impedance windings Center tap 9:1 Impedance ratio Center tap C6 C7 C8 C9 C3 C1 - Arco 402, 1.5 ±20 pF C2 - Arco 406, 15 ±115 pF C3, C4, C8, C9, C10 - 1000 pF Chip C5, C11 - 0.1 mF Chip C6 - 330 pF Chip C7 - 200 pF and 180 pF Chips in Parallel C12 - 0.47 mF Ceramic Chip, Kemet 1215 or Equivalent C13 - Arco 403, 3.0 ±35 pF L1 - 10 T urns AWG #16 Enameled Wire, Close Wound, 1/4, I.D. L2 - Ferrite Beads of Suitable Material for 1.5±2.0 mH Total Inductance R1 - 100 Ohms, 1/2 W R2 - 1.0 kOhm, 1/2 W 4:1 Impedance ratio Connections to low impedance windings T1 - 9:1 RF Transformer. Can be made of 15±18 Ohms Semirigid Co-ax, 62 ±90 Mils O.D. T2 - 1:9 RF Transformer . Can be made of 15±18 Ohms Semirigid Co-ax, 70 ±90 Mils O.D. Board Material - 0.062 , Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, er = 5 NOTE: For stability, the input transformer T1 must be loaded with ferrite toroids or beads to increase the common mode inductance. For operation below 100 MHz. The same is required for the output transformer. See pictures for construction details. Unless Otherwise Noted, All Chip Capacitors are ATC Type 100B or Equivalent. Figure 7. 175 MHz T est Circuit 050-4953 Rev A 5-2009 C2 VRF141G 1.100 .435 1 2 0.400 Pin 1. Drain 2. Drain 3. Gate 4. Gate 5. Source 0.390 5 0.200 3 4 .065 rad 2 PL .225 .107 .060 .860 1.340 .005 .210 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Package Dimensions (inches) 050-4953 Rev A 5-2009 All Dimensions are ± .005 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.