MICROSEMI ARF1519

ARF1519
ARF1519
BeO
104T-100
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
250V
750W
25MHz
The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial
RF power generator and amplifier applications up to 25 MHz.
• Specified 250 Volt, 13.56 MHz Characteristics:
•
Output Power = 750 Watts.
•
Gain = 17dB (Class C)
•
Efficiency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
VGS
Gate-Source Voltage
PD
Total Device Dissipation @ TC = 25°C
TJ,TSTG
TL
ARF1519
UNIT
1000
Volts
20
Amps
±30
Volts
1350
Watts
-55 to 175
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 300μA)
VDS(ON)
On State Drain Voltage
IDSS
IGSS
1
TYP
MAX
5
7
1000
(I D(ON) = 10A, VGS = 10V)
300
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
3000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±600
Forward Transconductance (VDS = 15V, ID = 10A)
gfs
MIN
Visolation
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 6mA)
3
14
UNIT
Volts
μA
nA
mhos
TBD
Volts
2
4
Volts
MAX
UNIT
Characteristic (per package unless otherwise noted)
MIN
TYP
0.13
RθJC
Junction to Case
RθCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
0.09
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
050-4935 Rev B
Symbol
2-2008
THERMAL CHARACTERISTICS
ARF1519
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 150V
f = 1 MHz
TYP
MAX
4600
5600
310
350
90
120
MAX
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
1
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 13.56MHz
17
20
dB
70
75
%
VGS = 0V
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
VDD = 200V
Pout = 750W
No Degradation in Output Power
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
CAPACITANCE (pf)
Coss
Crss
ID, DRAIN CURRENT (AMPERES)
60
Ciss
50
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
40
30
20
10
TJ = +25°C
TJ = +125°C
050-4935 Rev B
2-2008
.1
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
UNIT
0
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
ARF1519
50
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 3, Typical Threshold Voltage vs Temperature
45
6.5V
6V
40
35
30
5.5V
25
20
5V
15
10
4.5V
5
4V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Output Characteristics
0.2
D=0.5
0.05
0.2
0.1
0.01
0.05
0.005
0.02
0.01
Note:
SINGLE PULSE
0.001
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
10
Table 1 - Typical Class AB Large Signal Impedance -- ARF1519
Zin (Ω)
ZOL (Ω)
2.0
13.5
10.6 -j 12.2
0.5 -j 2.7
31 -j 4.7
15.6 -j 16
Zin - Gate shunted with 25Ω IDQ = 100mA
ZOL - Conjugate of optimum load for 750 Watts
output at Vdd = 200V
2-2008
F (MHz)
050-4935 Rev B
Z JC, THERMAL IMPEDANCE (°C/W)
q
0.1
ARF1519 -- 13.56 MHz Test Circuit
200V
L3
C7
C9
C10
C8
L1
Output
L2
RF
Input
C4
C5
T1
C6
DUT
C1
C2
C3
C1-C3 1nF X7R 100V smt
C4 2x 8.2 nF 1kV COG
C5 270pF x2 ATC 100C
C7-C10 8.2 nF 1kv COG
C11 390 + 27 pF ATC 100C
L1 2uH - 22t #24 enam. .312" dia.
L2 368 nH - 5t #12 .625" dia .5" l
L3 500nH 2t on 850u .5" bead
R1 2.2k 0.5W
T1 10:1t transformer
R1
Parts placement - Not to Scale.
13.56 MHz Test Amp
ARF1519
BeO
1525-100
ARF1518
J2
T1
J1
RF 12-04
Thermal Considerations and Package
Mounting:
.250
2-2008
HAZARDOUS MATERIAL WARNING
050-4935 Rev B
The rated 1350W power dissipation is only
available when the package mounting surface is
at 25°C and the junction temperature is 200°C.
The thermal resistance between junctions and
case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W
between the package base and the mounting surface is typical. Insure that the mounting surface
is smooth and flat. Thermal joint compound
must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to 1.2 Nm.
The ceramic portion of the device between
leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
D
.466
G
.500
.150r
S
ARF1519
.250
BeO
.750
1.000
1
1525-100
.125d
.500
2
3
1.250
1.500
4
.300
.200
.005 .040
1
2
3
4
Drain
Source
Source
Gate